Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals

Nötzel, R. and Urbańczyk, Adam (2012). Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals. "Journal of Crystal Growth", v. 341 (n. 1); pp. 24-26. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2011.12.068.

Description

Title: Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals
Author/s:
  • Nötzel, R.
  • Urbańczyk, Adam
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: February 2012
ISSN: 0022-0248
Volume: 341
Subjects:
Freetext Keywords: A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We report growth of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy with low density of 2 μm−2 by conversion of In nanocrystals deposited at low temperatures. The total amount of InAs used is about one monolayer, which is less than the critical thickness for conventional Stranski–Krastanov QDs. We also demonstrate the importance of the starting surface reconstruction for obtaining uniform QDs. The QD emission wavelength is easily tunable upon post-growth annealing with no wetting layer signal visible for short anneals. Microphotoluminescence measurements reveal well separated and sharp emission lines of individual QDs.

More information

Item ID: 16140
DC Identifier: http://oa.upm.es/16140/
OAI Identifier: oai:oa.upm.es:16140
DOI: 10.1016/j.jcrysgro.2011.12.068
Official URL: http://www.sciencedirect.com/science/article/pii/S0022024811011067
Deposited by: Memoria Investigacion
Deposited on: 27 Jul 2013 08:24
Last Modified: 21 Apr 2016 16:28
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