Numerical simulation of Ge solar cells using D-AMPS-1D code

Barrera, M. and Rubinelli, F. and Rey-Stolle Prado, Ignacio and Plá, J. (2012). Numerical simulation of Ge solar cells using D-AMPS-1D code. "Physica B: Condensed Matter", v. 407 (n. 16); pp. 3282-3284. ISSN 0921-4526. https://doi.org/10.1016/j.physb.2011.12.087.

Description

Title: Numerical simulation of Ge solar cells using D-AMPS-1D code
Author/s:
  • Barrera, M.
  • Rubinelli, F.
  • Rey-Stolle Prado, Ignacio
  • Plá, J.
Item Type: Article
Título de Revista/Publicación: Physica B: Condensed Matter
Date: August 2012
ISSN: 0921-4526
Volume: 407
Subjects:
Freetext Keywords: Solar cells, Germanium, Numerical simulation
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A solar cell is a solid state device that converts the energy of sunlight directly into electricity by the photovoltaic effect. When light with photon energies greater than the band gap is absorbed by a semiconductor material, free electrons and free holes are generated by optical excitation in the material. The main characteristic of a photovoltaic device is the presence of internal electric field able to separate the free electrons and holes so they can pass out of the material to the external circuit before they recombine. Numerical simulation of photovoltaic devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. The electrical transport and the optical behavior of the solar cells discussed in this work were studied with the simulation code D-AMPS-1D. This software is an updated version of the one-dimensional (1D) simulation program Analysis of Microelectronic and Photonic Devices (AMPS) that was initially developed at The Penn State University, USA. Structures such as homojunctions, heterojunctions, multijunctions, etc., resulting from stacking layers of different materials can be studied by appropriately selecting characteristic parameters. In this work, examples of cells simulation made with D-AMPS-1D are shown. Particularly, results of Ge photovoltaic devices are presented. The role of the InGaP buffer on the device was studied. Moreover, a comparison of the simulated electrical parameters with experimental results was performed.

More information

Item ID: 16183
DC Identifier: http://oa.upm.es/16183/
OAI Identifier: oai:oa.upm.es:16183
DOI: 10.1016/j.physb.2011.12.087
Official URL: http://www.sciencedirect.com/science/article/pii/S0921452611012804
Deposited by: Memoria Investigacion
Deposited on: 07 Jul 2013 10:31
Last Modified: 21 Apr 2016 16:30
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