In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Barrigón Montañés, Enrique and Brückner, Sebastian and Supplie, Oliver and Döscher, Henning and Rey-Stolle Prado, Ignacio and Hannappel, Thomas (2013). In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient. "Journal of Crystal Growth", v. 370 ; pp. 173-176. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2012.07.046.

Description

Title: In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient
Author/s:
  • Barrigón Montañés, Enrique
  • Brückner, Sebastian
  • Supplie, Oliver
  • Döscher, Henning
  • Rey-Stolle Prado, Ignacio
  • Hannappel, Thomas
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: May 2013
ISSN: 0022-0248
Volume: 370
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

GaInP nucleation on Ge(100) often starts by annealing of the Ge(100) substrates under supply of phosphorus precursors. However, the influence on the Ge surface is not well understood. Here, we studied vicinal Ge(100) surfaces annealed under tertiarybutylphosphine (TBP) supply in MOVPE by in situ reflection anisotropy spectroscopy (RAS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). While XPS reveals a P termination and the presence of carbon on the Ge surface, LEED patterns indicate a disordered surface probably due to by-products of the TBP pyrolysis. However, the TBP annealed Ge(100) surface exhibits a characteristic RA spectrum, which is related to the P termination. RAS allows us to in situ control phosphorus desorption dependent on temperature.

More information

Item ID: 16225
DC Identifier: http://oa.upm.es/16225/
OAI Identifier: oai:oa.upm.es:16225
DOI: 10.1016/j.jcrysgro.2012.07.046
Official URL: http://www.sciencedirect.com/science/article/pii/S0022024812005428
Deposited by: Memoria Investigacion
Deposited on: 28 Jul 2013 07:32
Last Modified: 01 Jun 2015 22:56
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