In situ control of As dimer orientation on Ge(100) surfaces

Brückner, Sebastian and Supplie, Oliver and Barrigón Montañés, Enrique and Luczak, Johannes and Kleinschmidt, Peter and Rey-Stolle Prado, Ignacio and Döscher, Henning and Hannappel, Thomas (2012). In situ control of As dimer orientation on Ge(100) surfaces. "Applied Physics Letters", v. 101 (n. 12); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4754122.

Description

Title: In situ control of As dimer orientation on Ge(100) surfaces
Author/s:
  • Brückner, Sebastian
  • Supplie, Oliver
  • Barrigón Montañés, Enrique
  • Luczak, Johannes
  • Kleinschmidt, Peter
  • Rey-Stolle Prado, Ignacio
  • Döscher, Henning
  • Hannappel, Thomas
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: September 2012
ISSN: 0003-6951
Volume: 101
Subjects:
Freetext Keywords: annealing, arsenic, elemental semiconductors, germanium, low energy electron diffraction, MOCVD, reflectivity, scanning tunnelling microscopy, semiconductor epitaxial layers, semiconductor growth, X-ray photoelectron spectra
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As4 during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100): As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100): As surfaces.

More information

Item ID: 16227
DC Identifier: http://oa.upm.es/16227/
OAI Identifier: oai:oa.upm.es:16227
DOI: 10.1063/1.4754122
Official URL: http://apl.aip.org/resource/1/applab/v101/i12/p121602_s1?isAuthorized=no
Deposited by: Memoria Investigacion
Deposited on: 28 Jul 2013 08:20
Last Modified: 21 Apr 2016 16:32
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