Impact of MOVPE Environment on Silicon Substrates for III-V-on-Si Multijunction Solar Cells

Garcia Tabares Valdivieso, Elisa and García Vara, Iván and Lelievre, Jean Francoise and Rey-Stolle Prado, Ignacio (2012). Impact of MOVPE Environment on Silicon Substrates for III-V-on-Si Multijunction Solar Cells. "Japanese Journal of Applied Physics", v. 2012 (n. 51); pp.. ISSN 0021-4922. https://doi.org/10.1143/JJAP.51.10ND05.

Description

Title: Impact of MOVPE Environment on Silicon Substrates for III-V-on-Si Multijunction Solar Cells
Author/s:
  • Garcia Tabares Valdivieso, Elisa
  • García Vara, Iván
  • Lelievre, Jean Francoise
  • Rey-Stolle Prado, Ignacio
Item Type: Article
Título de Revista/Publicación: Japanese Journal of Applied Physics
Date: October 2012
ISSN: 0021-4922
Volume: 2012
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

With the final goal of integrating III-V materials to silicon for tandem solar cells, the influence of the metal-organic vapor phase epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell device. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. The effect of the formation of the emitter by phosphorus diffusion has also been evaluated.

More information

Item ID: 16231
DC Identifier: http://oa.upm.es/16231/
OAI Identifier: oai:oa.upm.es:16231
DOI: 10.1143/JJAP.51.10ND05
Official URL: http://jjap.jsap.jp/link?JJAP/51/10ND05/
Deposited by: Memoria Investigacion
Deposited on: 31 Jul 2013 16:16
Last Modified: 22 Sep 2014 11:11
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