Fabrication of GaN nanorods by focused ion beam

Martinez Rodrigo, Javier and Barbagini, Francesca and Bengoechea Encabo, Ana and Albert, Steven and Sánchez García, Miguel Angel and Calleja Pardo, Enrique (2012). Fabrication of GaN nanorods by focused ion beam. "Microelectronic Engineering", v. 98 ; pp. 250-253. ISSN 0167-9317. https://doi.org/10.1016/j.mee.2012.07.006.

Description

Title: Fabrication of GaN nanorods by focused ion beam
Author/s:
  • Martinez Rodrigo, Javier
  • Barbagini, Francesca
  • Bengoechea Encabo, Ana
  • Albert, Steven
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Microelectronic Engineering
Date: October 2012
ISSN: 0167-9317
Volume: 98
Subjects:
Freetext Keywords: Nanorods, GaN, FIB, Nanotechnology
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Ordered arrays of III-Nitride nanocolumns are excellent candidates for the fabrication of nano-optoelectronic devices. Different technologies such as e-beam lithography or colloidal lithography, have been used to obtain ordered arrays. All these technologies have in common several processing steps that can affect the crystalline growth of the nanocolumns. In this work, we present a single lithographic step that permits to grow ordered GaN nanocolumns with different geometries. The patterning is based in the use of a focused ion beam with different doses. With this method has been possible to create GaN nanopillars and nanocylinders.

More information

Item ID: 16342
DC Identifier: http://oa.upm.es/16342/
OAI Identifier: oai:oa.upm.es:16342
DOI: 10.1016/j.mee.2012.07.006
Official URL: http://www.sciencedirect.com/science/article/pii/S0167931712002870
Deposited by: Memoria Investigacion
Deposited on: 03 Aug 2013 08:09
Last Modified: 01 Nov 2014 23:56
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