Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

Romero Rojo, Fátima and Feneberg, Martin and Moser, Pascal and Berger, Christoph and Bläsing, Jürgen and Dadgar, Armin and Krost, Alois and Sakalauskas, Egidijus and Goldhahn, Rüdige (2012). Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content. "Applied Physics Letters", v. 100 (n. 21); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4720087.

Description

Title: Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
Author/s:
  • Romero Rojo, Fátima
  • Feneberg, Martin
  • Moser, Pascal
  • Berger, Christoph
  • Bläsing, Jürgen
  • Dadgar, Armin
  • Krost, Alois
  • Sakalauskas, Egidijus
  • Goldhahn, Rüdige
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: May 2012
ISSN: 0003-6951
Volume: 100
Subjects:
Freetext Keywords: aluminium compounds, electron-hole recombination, excitons, gallium compounds, III-V semiconductors, indium compounds, photoluminescence, semiconductor heterojunctions, two-dimensional electron gas, wide band gap semiconductors
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The luminescence properties of InxAl1−xN/GaN heterostructures are investigated systematically as a function of the In content (x = 0.067 − 0.208). The recombination between electrons confined in the two-dimensional electron gas and free holes in the GaN template is identified and analyzed. We find a systematic shift of the recombination with increasing In content from about 80 meV to only few meV below the GaN exciton emission. These results are compared with model calculations and can be attributed to the changing band profile and originating from the polarization gradient between InAlN and GaN.

More information

Item ID: 16347
DC Identifier: http://oa.upm.es/16347/
OAI Identifier: oai:oa.upm.es:16347
DOI: 10.1063/1.4720087
Official URL: http://apl.aip.org/resource/1/applab/v100/i21/p212101_s1
Deposited by: Memoria Investigacion
Deposited on: 21 Jul 2013 09:16
Last Modified: 21 Apr 2016 16:39
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