Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies

Tablero Crespo, César (2012). Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies. "Progress in Photovoltaics: Research and Applications" ; ISSN 1099-159X. https://doi.org/10.1002/pip.2173.

Description

Title: Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies
Author/s:
  • Tablero Crespo, César
Item Type: Article
Título de Revista/Publicación: Progress in Photovoltaics: Research and Applications
Date: February 2012
ISSN: 1099-159X
Subjects:
Freetext Keywords: Ionization levels;electronic structure;semiconductors;impurities;photovoltaics
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material.

More information

Item ID: 16417
DC Identifier: http://oa.upm.es/16417/
OAI Identifier: oai:oa.upm.es:16417
DOI: 10.1002/pip.2173
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pip.2173/abstract
Deposited by: Memoria Investigacion
Deposited on: 15 Jul 2013 17:21
Last Modified: 21 Apr 2016 16:43
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