Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

Anaya, J.; Torres, J.; Martin Martin, A.; Souto, J.; Jiménez, Juan; Rodríguez Domínguez, Andrés y Rodríguez Rodríguez, Tomás (2012). Study of the temperature distribution in Si nanowires under microscopic laser beam excitation. "Applied Physics A" ; ISSN 0947-8396. https://doi.org/10.1007/s00339-012-7509-y.

Descripción

Título: Study of the temperature distribution in Si nanowires under microscopic laser beam excitation
Autor/es:
  • Anaya, J.
  • Torres, J.
  • Martin Martin, A.
  • Souto, J.
  • Jiménez, Juan
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
Tipo de Documento: Artículo
Título de Revista/Publicación: Applied Physics A
Fecha: Diciembre 2012
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs.

Más información

ID de Registro: 16430
Identificador DC: http://oa.upm.es/16430/
Identificador OAI: oai:oa.upm.es:16430
Identificador DOI: 10.1007/s00339-012-7509-y
URL Oficial: http://link.springer.com/article/10.1007/s00339-012-7509-y
Depositado por: Memoria Investigacion
Depositado el: 15 Jul 2013 18:37
Ultima Modificación: 21 Abr 2016 16:44
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