Exploring polysilicon deposition conditions through a laboratory CVD prototype

Ramos Cabal, Alba; Cañizo Nadal, Carlos del; Valdehita Torija, Javier; Zamorano Saavedra, Juan Carlos; Rodríguez Rodríguez, Araceli y Luque López, Antonio (2012). Exploring polysilicon deposition conditions through a laboratory CVD prototype. "Physica Status Solidi (C)", v. 9 (n. 10-11 ); pp. 2164-2168. ISSN 1610-1642. https://doi.org/10.1002/pssc.201200161.

Descripción

Título: Exploring polysilicon deposition conditions through a laboratory CVD prototype
Autor/es:
  • Ramos Cabal, Alba
  • Cañizo Nadal, Carlos del
  • Valdehita Torija, Javier
  • Zamorano Saavedra, Juan Carlos
  • Rodríguez Rodríguez, Araceli
  • Luque López, Antonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Physica Status Solidi (C)
Fecha: Octubre 2012
Volumen: 9
Materias:
Palabras Clave Informales: Solar grade silicon; CVD process; trichlorosilane; mass spectrometry
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Cost and energy consumption related to obtaining polysilicon impact significantly on the total photovoltaic module cost and its energy payback time. Process simplifications can be performed, leading to cost reductions. Nowadays, among several approaches currently pursued to produce the so called Solar Grade Silicon, the chemical route, named Siemens process, is the dominant one. At the Instituto de Energía Solar research on this topic is focused on the chemical route, in particular on the polysilicon deposition step by chemical vapor deposition (CVD) from Trichlorosilane through a laboratory prototype. Valuable information about the phenomena involved in the polysilicon deposition process and the operating conditions is obtained from our experiments. A particular feature of our system is the inclusion of a mass spectrometer. The present work comprises spectra characterization of the polysilicon deposition chemical reaction, temperature and inlet gas mixture composition influence on the deposition rate and analysis of polysilicon deposition conditions for the ?pop-corn' phenomenon to appear, based on experimental experience (Actas de la Special Issue: E-MRS 2012 Spring Meeting ? Symposium A

Más información

ID de Registro: 16561
Identificador DC: http://oa.upm.es/16561/
Identificador OAI: oai:oa.upm.es:16561
Identificador DOI: 10.1002/pssc.201200161
URL Oficial: http://onlinelibrary.wiley.com/doi/10.1002/pssc.201200161/abstract
Depositado por: Memoria Investigacion
Depositado el: 04 Ago 2013 10:41
Ultima Modificación: 22 Sep 2014 11:13
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