Extended description of tunnel junctions for distributed modeling of concentrator multi-junction solar cells

Espinet González, Pilar; García Vara, Iván; Rey-Stolle Prado, Ignacio; Algora del Valle, Carlos y Baudrit, Mathieu (2011). Extended description of tunnel junctions for distributed modeling of concentrator multi-junction solar cells. "Solar Energy Materials and Solar Cells", v. 95 (n. 9); pp. 2693-2697. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2011.05.009.

Descripción

Título: Extended description of tunnel junctions for distributed modeling of concentrator multi-junction solar cells
Autor/es:
  • Espinet González, Pilar
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Baudrit, Mathieu
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Fecha: Septiembre 2011
Volumen: 95
Materias:
Palabras Clave Informales: Solar concentrator; CPV; Multi-junction solar cells; Tunnel junction
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

One of the key components of highly efficient multi-junction concentrator solar cells is the tunnel junction interconnection. In this paper, an improved 3D distributed model is presented that considers real operation regimes in a tunnel junction. This advanced model is able to accurately simulate the operation of the solar cell at high concentraions at which the photogenerated current surpasses the peak current of the tunnel junctionl Simulations of dual-junction solar cells were carried out with the improved model to illustrate its capabilities and the results have been correlated with experimental data reported in the literature. These simulations show that under certain circumstances, the solar cells short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading toward dark regions, which occurs through the anode/p-barrier of the tunnel junction.

Más información

ID de Registro: 16690
Identificador DC: http://oa.upm.es/16690/
Identificador OAI: oai:oa.upm.es:16690
Identificador DOI: 10.1016/j.solmat.2011.05.009
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0927024811002662
Depositado por: Memoria Investigacion
Depositado el: 03 Ago 2013 08:48
Ultima Modificación: 21 Abr 2016 17:03
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