SiGe/Si nanowire axial heterostructures grown by LPCVD using Ga-Au

Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás and Ballesteros Pérez, Carmen Inés and Jiménez, J. (2012). SiGe/Si nanowire axial heterostructures grown by LPCVD using Ga-Au. In: "Materials Research Society Symposium Proceedings", 25/11/2012 - 30/11/2012, Boston, USA. pp. 1-6. https://doi.org/10.1557/opl.2013.273.

Description

Title: SiGe/Si nanowire axial heterostructures grown by LPCVD using Ga-Au
Author/s:
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
  • Ballesteros Pérez, Carmen Inés
  • Jiménez, J.
Item Type: Presentation at Congress or Conference (Article)
Event Title: Materials Research Society Symposium Proceedings
Event Dates: 25/11/2012 - 30/11/2012
Event Location: Boston, USA
Title of Book: Materials Research Society Symposium Proceedings
Date: 2012
Volume: 1510
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/Si nanowire axial heterostructures has been investigated. The heterostructures grown in a continuous process by just switching the gas precursors, show uniform nanowire diameters, almost abrupt compositional changes and no defects between the different sections. These features represent significant improvements over the results obtained using pure Au.

More information

Item ID: 19589
DC Identifier: http://oa.upm.es/19589/
OAI Identifier: oai:oa.upm.es:19589
DOI: 10.1557/opl.2013.273
Deposited by: Memoria Investigacion
Deposited on: 14 Sep 2013 08:55
Last Modified: 21 Apr 2016 20:22
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