Mechanical characterization of multicrystalline silicon wafers

Tejado Garrido, Elena María; Orellana Pérez, T.; Pastor Caño, Jose Ignacio; Funke, V.C. y Fütterer, W. (2012). Mechanical characterization of multicrystalline silicon wafers. En: "4th International Congress on Ceramics (ICC4)", 15/07/2012 - 19/07/2012, Chicago, Estados Unidos. p. 1.


Título: Mechanical characterization of multicrystalline silicon wafers
  • Tejado Garrido, Elena María
  • Orellana Pérez, T.
  • Pastor Caño, Jose Ignacio
  • Funke, V.C.
  • Fütterer, W.
Tipo de Documento: Ponencia en Congreso o Jornada (Póster)
Título del Evento: 4th International Congress on Ceramics (ICC4)
Fechas del Evento: 15/07/2012 - 19/07/2012
Lugar del Evento: Chicago, Estados Unidos
Título del Libro: Proceedings of 4th International Congress on Ceramics (ICC4)
Fecha: Julio 2012
Palabras Clave Informales: silicon wafers, wafer breakage, mechanical properties, impurities
Escuela: E.T.S.I. Caminos, Canales y Puertos (UPM)
Departamento: Ciencia de los Materiales
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behavior of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. The impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, Young’s modulus, hardness and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

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Depositado el: 19 Dic 2013 09:46
Ultima Modificación: 24 Sep 2018 07:45
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