Study of the Electrical Behavior in Intermediate Band-Si Junctions

Pastor Pastor, David and Olea Ariza, Javier and Prado Millán, Alvaro del and García Hemme, Eric and García Hernansanz, Rodrigo and González Pariente, L. and Mártil de la Plaza, Ignacio and González Díaz, Germán (2012). Study of the Electrical Behavior in Intermediate Band-Si Junctions. In: "Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids", 25/11/2012 - 30/11/2012, Boston (MA), EEUU. pp. 1-7. https://doi.org/10.1557/opl.2013.224.

Description

Title: Study of the Electrical Behavior in Intermediate Band-Si Junctions
Author/s:
  • Pastor Pastor, David
  • Olea Ariza, Javier
  • Prado Millán, Alvaro del
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • González Pariente, L.
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
Item Type: Presentation at Congress or Conference (Article)
Event Title: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids
Event Dates: 25/11/2012 - 30/11/2012
Event Location: Boston (MA), EEUU
Title of Book: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids
Date: November 2012
Volume: 1493
Subjects:
Freetext Keywords: electrical properties; laser annealing; ion-implantation
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

More information

Item ID: 19804
DC Identifier: http://oa.upm.es/19804/
OAI Identifier: oai:oa.upm.es:19804
DOI: 10.1557/opl.2013.224
Deposited by: Memoria Investigacion
Deposited on: 18 Sep 2013 17:07
Last Modified: 21 Apr 2016 21:19
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