Study of the Electrical Behavior in Intermediate Band-Si Junctions

Pastor Pastor, David; Olea Ariza, Javier; Prado Millán, Alvaro del; García Hemme, Eric; García Hernansanz, Rodrigo; González Pariente, L.; Mártil de la Plaza, Ignacio y González Díaz, Germán (2012). Study of the Electrical Behavior in Intermediate Band-Si Junctions. En: "Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids", 25/11/2012 - 30/11/2012, Boston (MA), EEUU. pp. 1-7. https://doi.org/10.1557/opl.2013.224.

Descripción

Título: Study of the Electrical Behavior in Intermediate Band-Si Junctions
Autor/es:
  • Pastor Pastor, David
  • Olea Ariza, Javier
  • Prado Millán, Alvaro del
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • González Pariente, L.
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids
Fechas del Evento: 25/11/2012 - 30/11/2012
Lugar del Evento: Boston (MA), EEUU
Título del Libro: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids
Fecha: Noviembre 2012
Volumen: 1493
Materias:
Palabras Clave Informales: electrical properties; laser annealing; ion-implantation
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

Más información

ID de Registro: 19804
Identificador DC: http://oa.upm.es/19804/
Identificador OAI: oai:oa.upm.es:19804
Identificador DOI: 10.1557/opl.2013.224
Depositado por: Memoria Investigacion
Depositado el: 18 Sep 2013 17:07
Ultima Modificación: 21 Abr 2016 21:19
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