Fracture strength of drilled wafers: study of the stress concentration factor and determination of the weibull distribution of the fracture stress

Barredo Egusquiza, Josu and Alarcón, C. and Gómez Lera, Sagrario (2012). Fracture strength of drilled wafers: study of the stress concentration factor and determination of the weibull distribution of the fracture stress. In: "Issues on Mechanical and Civil Engineering", 16/11/2012 - 16/11/2012, Madrid. pp. 281-294.

Description

Title: Fracture strength of drilled wafers: study of the stress concentration factor and determination of the weibull distribution of the fracture stress
Author/s:
  • Barredo Egusquiza, Josu
  • Alarcón, C.
  • Gómez Lera, Sagrario
Item Type: Presentation at Congress or Conference (Article)
Event Title: Issues on Mechanical and Civil Engineering
Event Dates: 16/11/2012 - 16/11/2012
Event Location: Madrid
Title of Book: Issues on Mechanical and Civil Engineering
Date: 2012
Subjects:
Faculty: E.T.S.I. Industriales (UPM)
Department: Mecánica Estructural y Construcciones Industriales [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In the photovoltaic field, the back contact solar cells technology has appeared as an alternative to the traditional silicon modules. This new type of cells places both positive and negative contacts on the back side of the cells maximizing the exposed surface to the light and making easier the interconnection of the cells in the module. The Emitter Wrap-Through solar cell structure presents thousands of tiny holes to wrap the emitter from the front surface to the rear surface. These holes are made in a first step over the silicon wafers by means of a laser drilling process. This step is quite harmful from a mechanical point of view since holes act as stress concentrators leading to a reduction in the strength of these wafers. This paper presents the results of the strength characterization of drilled wafers. The study is carried out testing the samples with the ring on ring device. Finite Element models are developed to simulate the tests. The stress concentration factor of the drilled wafers under this load conditions is determined from the FE analysis. Moreover, the material strength is characterized fitting the fracture stress of the samples to a three-parameter Weibull cumulative distribution function. The parameters obtained are compared with the ones obtained in the analysis of a set of samples without holes to validate the method employed for the study of the strength of silicon drilled wafers.

More information

Item ID: 19997
DC Identifier: http://oa.upm.es/19997/
OAI Identifier: oai:oa.upm.es:19997
Deposited by: Memoria Investigacion
Deposited on: 16 Feb 2014 12:48
Last Modified: 21 Apr 2016 22:08
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