In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures

Brückner, Sebastian and Supplie, Oliver and Barrigón Montañés, Enrique and Dobrich, Anja and Luczak, Johannes and Löbbel, Claas and Rey-Stolle Prado, Ignacio and Kleinschmidt, Peter and Döscher, Henning and Hannappel, Thomas (2012). In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures. In: "8th International Conference on Concetrating Photovoltaic Systems (CPV-8)", 16/04/2012 - 18/04/2012, Toledo, España. pp. 32-35. https://doi.org/10.1063/1.4753827.

Description

Title: In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures
Author/s:
  • Brückner, Sebastian
  • Supplie, Oliver
  • Barrigón Montañés, Enrique
  • Dobrich, Anja
  • Luczak, Johannes
  • Löbbel, Claas
  • Rey-Stolle Prado, Ignacio
  • Kleinschmidt, Peter
  • Döscher, Henning
  • Hannappel, Thomas
Item Type: Presentation at Congress or Conference (Article)
Event Title: 8th International Conference on Concetrating Photovoltaic Systems (CPV-8)
Event Dates: 16/04/2012 - 18/04/2012
Event Location: Toledo, España
Title of Book: International Conference on Concetrating Photovoltaic Systems
Date: 2012
Volume: 1477
Subjects:
Freetext Keywords: annealing, cooling, elemental semiconductors
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Si(100) and Ge(100) substrates essential for subsequent III-V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. Reflectance anisotropy spectroscopy (RAS) enabled us to distinguish characteristic configurations of vicinal Si(100) in situ: covered with oxide, cleaned by thermal removing in H2, and terminated with monohydrides when cooling in H2 ambient. RAS measurements during cooling in H2 ambient after the oxide removal process revealed a transition from the clean to the monohydride terminated Si(100) surface dependent on process temperature. For vicinal Ge(100) we observed a characteristic RA spectrum after annealing and cooling in H2 ambient. According to results from X-ray photo electron spectroscopy and Fourier-transform infrared spectroscopy the spectrum corresponds to the monohydride terminated Ge(100) surface.

More information

Item ID: 20042
DC Identifier: http://oa.upm.es/20042/
OAI Identifier: oai:oa.upm.es:20042
DOI: 10.1063/1.4753827
Official URL: http://proceedings.aip.org/resource/2/apcpcs/1477/1/32_1
Deposited by: Memoria Investigacion
Deposited on: 29 Sep 2013 07:32
Last Modified: 21 Apr 2016 22:18
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