TCAD for PV: a fast method for accurately modelling metal impurity evolution during solar cell processing

Powell, Douglas Michael; Fenning, David P.; Hofstetter, Jasmin; Lelievre, Jean Francoise; Cañizo Nadal, Carlos del y Buonassisi, Tonio (2012). TCAD for PV: a fast method for accurately modelling metal impurity evolution during solar cell processing. "Photovoltaics International", v. 15 ; pp. 91-98. ISSN 8750-1473.

Descripción

Título: TCAD for PV: a fast method for accurately modelling metal impurity evolution during solar cell processing
Autor/es:
  • Powell, Douglas Michael
  • Fenning, David P.
  • Hofstetter, Jasmin
  • Lelievre, Jean Francoise
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Photovoltaics International
Fecha: Febrero 2012
Volumen: 15
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Coupled device and process silumation tools, collectively known as technology computer-aided design (TCAD), have been used in the integrated circuit industry for over 30 years. These tools allow researchers to quickly converge on optimized devide designs and manufacturing processes with minimal experimental expenditures. The PV industry has been slower to adopt these tools, but is quickly developing competency in using them. This paper introduces a predictive defect engineering paradigm and simulation tool, while demonstrating its effectiveness at increasing the performance and throughput of current industrial processes. the impurity-to-efficiency (I2E) simulator is a coupled process and device simulation tool that links wafer material purity, processing parameters and cell desigh to device performance. The tool has been validated with experimental data and used successfully with partners in industry. The simulator has also been deployed in a free web-accessible applet, which is available for use by the industrial and academic communities.

Más información

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Identificador DC: http://oa.upm.es/20187/
Identificador OAI: oai:oa.upm.es:20187
Depositado por: Memoria Investigacion
Depositado el: 30 Sep 2013 17:17
Ultima Modificación: 21 Abr 2016 22:41
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