TCAD for PV: a fast method for accurately modelling metal impurity evolution during solar cell processing

Powell, Douglas Michael and Fenning, David P. and Hofstetter, Jasmin and Lelievre, Jean Francoise and Cañizo Nadal, Carlos del and Buonassisi, Tonio (2012). TCAD for PV: a fast method for accurately modelling metal impurity evolution during solar cell processing. "Photovoltaics International", v. 15 ; pp. 91-98. ISSN 8750-1473.

Description

Title: TCAD for PV: a fast method for accurately modelling metal impurity evolution during solar cell processing
Author/s:
  • Powell, Douglas Michael
  • Fenning, David P.
  • Hofstetter, Jasmin
  • Lelievre, Jean Francoise
  • Cañizo Nadal, Carlos del
  • Buonassisi, Tonio
Item Type: Article
Título de Revista/Publicación: Photovoltaics International
Date: February 2012
ISSN: 8750-1473
Volume: 15
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Coupled device and process silumation tools, collectively known as technology computer-aided design (TCAD), have been used in the integrated circuit industry for over 30 years. These tools allow researchers to quickly converge on optimized devide designs and manufacturing processes with minimal experimental expenditures. The PV industry has been slower to adopt these tools, but is quickly developing competency in using them. This paper introduces a predictive defect engineering paradigm and simulation tool, while demonstrating its effectiveness at increasing the performance and throughput of current industrial processes. the impurity-to-efficiency (I2E) simulator is a coupled process and device simulation tool that links wafer material purity, processing parameters and cell desigh to device performance. The tool has been validated with experimental data and used successfully with partners in industry. The simulator has also been deployed in a free web-accessible applet, which is available for use by the industrial and academic communities.

More information

Item ID: 20187
DC Identifier: http://oa.upm.es/20187/
OAI Identifier: oai:oa.upm.es:20187
Deposited by: Memoria Investigacion
Deposited on: 30 Sep 2013 17:17
Last Modified: 21 Apr 2016 22:41
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