Martí Vega, Antonio and Antolín Fernández, Elisa and García-Linares Fontes, Pablo and Cánovas Díaz, Enrique and Fuertes Marrón, David and Tablero Crespo, César and Mendes, Manuel J. and Mellor Null, Alexander Virgil and Tobías Galicia, Ignacio and Levy, M.Y. and Hernández Martín, Estela and Luque López, Antonio and Farmer, C.D. and Stanley, Colin and Campion, Richard P. and Hall, J.L. and Novikov, S.V. and Foxon, C.T. and Scheer, Roland and Marsen, Bjorn and Schock, Hans Werner and Picault, Michel and Chaix, Caterine
IBPOWER Project, Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost.
In: "34th IEEE Photovoltaic Specialists Conference (PVSC)", 07/06/2009- 12/06/2009, Philadelphia, PA. ISBN 978-1-4244-2949-3.
IBPOWER is a Project awarded under the 7th European Framework Programme that aims to advance research on intermediate band solar cells (IBSCs). These are solar cells conceived to absorb below bandgap energy photons by means of an electronic energy band that is located within the semiconductor bandgap, whilst producing photocurrent with output voltage still limited by the total semiconductor bandgap. IBPOWER employs two basic strategies for implementing the IBSC concept. The first is based on the use of quantum dots, the IB arising from the confined energy levels of the electrons in the dots. Quantum dots have led to devices that demonstrate the physical operation principles of the IB concept and have allowed identification of the problems to be solved to achieve actual high efficiencies. The second approach is based on the creation of bulk intermediate band materials by the insertion of an appropriate impurity into a bulk semiconductor. Under this approach it is expected that, when inserted at high densities, these impurities will find it difficult to capture electrons by producing a breathing mode and will cease behaving as non-radiative recombination centres. Towards this end the following systems are being investigated: a) Mn: In1-xGax N; b) transition metals in GaAs and c) thin films.