Nanotechnology for high frequency communications: nitrides and graphene

Calle Gómez, Fernando and Palacios, Tomás (2012). Nanotechnology for high frequency communications: nitrides and graphene. In: "13th edition of Trends in Nanotechnology International Conference (TNT2012)", 10/09/2012 - 14/09/2012, Madrid, España.

Description

Title: Nanotechnology for high frequency communications: nitrides and graphene
Author/s:
  • Calle Gómez, Fernando
  • Palacios, Tomás
Item Type: Presentation at Congress or Conference (Article)
Event Title: 13th edition of Trends in Nanotechnology International Conference (TNT2012)
Event Dates: 10/09/2012 - 14/09/2012
Event Location: Madrid, España
Title of Book: Trends in Nanotechnology International Conference (TNT2012)
Date: 2012
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sensing, communication and computation, involve the continued scaling down to the nanometer level. This scaling is enabled by of innovative device designs, improved processing technologies and assessment tools, and new material structures. In this work, we have used all these factors to demonstrate state-of-the-art HF devices in two materials with quite different electronic properties: wide semiconductor bandgap III-nitrides for resonators and power amplifiers; and graphene, a zero bandgap material expected to revolutionize low noise and HF flexible electronics. Some issues faced during their development will be discussed during the talk.

More information

Item ID: 20365
DC Identifier: http://oa.upm.es/20365/
OAI Identifier: oai:oa.upm.es:20365
Deposited by: Memoria Investigacion
Deposited on: 02 Oct 2013 17:25
Last Modified: 21 Apr 2016 23:06
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