Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns

Sánchez García, Miguel Angel and Albert, Steven and Bengoechea Encabo, Ana and Calleja Pardo, Enrique and Trampert, Achim and Jahn, U. and López, L.L. and Estradé, S. and Rebled, J.M. and Peiró, F. and Nataf, G. and Mierry, P. de and Zuniga Perez, J. (2012). Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns. In: "2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices,", 21/07/2012 - 22/07/2012, Berlin, Germany.

Description

Title: Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns
Author/s:
  • Sánchez García, Miguel Angel
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Calleja Pardo, Enrique
  • Trampert, Achim
  • Jahn, U.
  • López, L.L.
  • Estradé, S.
  • Rebled, J.M.
  • Peiró, F.
  • Nataf, G.
  • Mierry, P. de
  • Zuniga Perez, J.
Item Type: Presentation at Congress or Conference (Other)
Event Title: 2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices,
Event Dates: 21/07/2012 - 22/07/2012
Event Location: Berlin, Germany
Title of Book: 2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices,
Date: 2012
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A relevant issue concerning optoelectronic devices based on III-nitrides is the presence of strong polarization fields that may reduce efficiency.

More information

Item ID: 20367
DC Identifier: http://oa.upm.es/20367/
OAI Identifier: oai:oa.upm.es:20367
Deposited by: Memoria Investigacion
Deposited on: 09 Apr 2014 16:17
Last Modified: 21 Apr 2016 23:07
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