ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells

Gabás, M. and López-Escalante, M.C. and Algora del Valle, Carlos and Rey-Stolle Prado, Ignacio and Galiana Blanco, Beatriz and Palanco, S. and Ramos-Barrado, J.R. (2012). ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells. In: "38th IEEE Photovoltaic Specialists Conference (PVSC), 2012", 03/06/2012 - 08/06/2012, Austin, Texas (EEUU). ISBN 978-1-4673-0064-3. pp. 385-389.

Description

Title: ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells
Author/s:
  • Gabás, M.
  • López-Escalante, M.C.
  • Algora del Valle, Carlos
  • Rey-Stolle Prado, Ignacio
  • Galiana Blanco, Beatriz
  • Palanco, S.
  • Ramos-Barrado, J.R.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012
Event Dates: 03/06/2012 - 08/06/2012
Event Location: Austin, Texas (EEUU)
Title of Book: 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012
Date: June 2012
ISBN: 978-1-4673-0064-3
Subjects:
Freetext Keywords: gallium arsenide, heterojunctions, III-V semiconductor materials, X-ray photoelectron spectroscopy, interface analysis.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview

Abstract

In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior.

More information

Item ID: 20521
DC Identifier: http://oa.upm.es/20521/
OAI Identifier: oai:oa.upm.es:20521
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6317641
Deposited by: Memoria Investigacion
Deposited on: 07 Oct 2013 18:58
Last Modified: 21 Apr 2016 23:21
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM