Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry

Palanco, S. and Gabás, M. and Ayala, L. and Bijani, S. and Barrigón Montañés, Enrique and Algora del Valle, Carlos and Rey-Stolle Prado, Ignacio and Ramos-Barrado, J.R. (2012). Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry. In: "38th IEEE Photovoltaic Specialists Conference (PVSC)", 03/06/2012 - 08/06/2012, Austin, Texas (EEUU). pp. 432-436.

Description

Title: Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry
Author/s:
  • Palanco, S.
  • Gabás, M.
  • Ayala, L.
  • Bijani, S.
  • Barrigón Montañés, Enrique
  • Algora del Valle, Carlos
  • Rey-Stolle Prado, Ignacio
  • Ramos-Barrado, J.R.
Item Type: Presentation at Congress or Conference (Article)
Event Title: 38th IEEE Photovoltaic Specialists Conference (PVSC)
Event Dates: 03/06/2012 - 08/06/2012
Event Location: Austin, Texas (EEUU)
Title of Book: 38th IEEE Photovoltaic Specialists Conference (PVSC)
Date: 2012
Subjects:
Freetext Keywords: surface analysis, laser induced plasma spectrometry, in-situ.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The present work aims to assess Laser-Induced Plasma Spectrometry (LIPS) as a tool for the characterization of photovoltaic materials. Despite being a well-established technique with applications to many scientific and industrial fields, so far LIPS is little known to the photovoltaic scientific community. The technique allows the rapid characterization of layered samples without sample preparation, in open atmosphere and in real time. In this paper, we assess LIPS ability for the determination of elements that are difficult to analyze by other broadly used techniques, or for producing analytical information from very low-concentration elements. The results of the LIPS characterization of two different samples are presented: 1) a 90 nm, Al-doped ZnO layer deposited on a Si substrate by RF sputtering and 2) a Te-doped GaInP layer grown on GaAs by Metalorganic Vapor Phase Epitaxy. For both cases, the depth profile of the constituent and dopant elements is reported along with details of the experimental setup and the optimization of key parameters. It is remarkable that the longest time of analysis was ∼10 s, what, in conjunction with the other characteristics mentioned, makes of LIPS an appealing technique for rapid screening or quality control whether at the lab or at the production line.

More information

Item ID: 20522
DC Identifier: http://oa.upm.es/20522/
OAI Identifier: oai:oa.upm.es:20522
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6317651
Deposited by: Memoria Investigacion
Deposited on: 08 Oct 2013 16:03
Last Modified: 21 Apr 2016 23:21
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