Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry

Palanco, S.; Gabás, M.; Ayala, L.; Bijani, S.; Barrigón Montañés, Enrique; Algora del Valle, Carlos; Rey-Stolle Prado, Ignacio y Ramos-Barrado, J.R. (2012). Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry. En: "38th IEEE Photovoltaic Specialists Conference (PVSC)", 03/06/2012 - 08/06/2012, Austin, Texas (EEUU). pp. 432-436.

Descripción

Título: Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry
Autor/es:
  • Palanco, S.
  • Gabás, M.
  • Ayala, L.
  • Bijani, S.
  • Barrigón Montañés, Enrique
  • Algora del Valle, Carlos
  • Rey-Stolle Prado, Ignacio
  • Ramos-Barrado, J.R.
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 38th IEEE Photovoltaic Specialists Conference (PVSC)
Fechas del Evento: 03/06/2012 - 08/06/2012
Lugar del Evento: Austin, Texas (EEUU)
Título del Libro: 38th IEEE Photovoltaic Specialists Conference (PVSC)
Fecha: 2012
Materias:
Palabras Clave Informales: surface analysis, laser induced plasma spectrometry, in-situ.
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The present work aims to assess Laser-Induced Plasma Spectrometry (LIPS) as a tool for the characterization of photovoltaic materials. Despite being a well-established technique with applications to many scientific and industrial fields, so far LIPS is little known to the photovoltaic scientific community. The technique allows the rapid characterization of layered samples without sample preparation, in open atmosphere and in real time. In this paper, we assess LIPS ability for the determination of elements that are difficult to analyze by other broadly used techniques, or for producing analytical information from very low-concentration elements. The results of the LIPS characterization of two different samples are presented: 1) a 90 nm, Al-doped ZnO layer deposited on a Si substrate by RF sputtering and 2) a Te-doped GaInP layer grown on GaAs by Metalorganic Vapor Phase Epitaxy. For both cases, the depth profile of the constituent and dopant elements is reported along with details of the experimental setup and the optimization of key parameters. It is remarkable that the longest time of analysis was ∼10 s, what, in conjunction with the other characteristics mentioned, makes of LIPS an appealing technique for rapid screening or quality control whether at the lab or at the production line.

Más información

ID de Registro: 20522
Identificador DC: http://oa.upm.es/20522/
Identificador OAI: oai:oa.upm.es:20522
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6317651
Depositado por: Memoria Investigacion
Depositado el: 08 Oct 2013 16:03
Ultima Modificación: 21 Abr 2016 23:21
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