Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

Anaya, J.; Torres, A.; Prieto, C.; Jiménez, J.; Rodríguez Domínguez, Andrés y Rodríguez Rodríguez, Tomás (2012). Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires. En: "11th International workshop on Beam Injection Assessment of Microstructures in Semiconductors", 25/06/2012 - 28/06/2012, Annaba, Argelia. pp. 1-8.

Descripción

Título: Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires
Autor/es:
  • Anaya, J.
  • Torres, A.
  • Prieto, C.
  • Jiménez, J.
  • Rodríguez Domínguez, Andrés
  • Rodríguez Rodríguez, Tomás
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 11th International workshop on Beam Injection Assessment of Microstructures in Semiconductors
Fechas del Evento: 25/06/2012 - 28/06/2012
Lugar del Evento: Annaba, Argelia
Título del Libro: International workshop on Beam Injection Assessment of Microstructures in Semiconductors
Fecha: 2012
Materias:
Palabras Clave Informales: Si, Nanowires, Raman spectroscopy, thermal conductivity, laser heating, phonons
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Tecnología Electrónica [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (fem). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterization of the NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NWs diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectra of Si NWs, where it is demonstrated that temperature induced by the laser beam play a major role in shaping the Raman spectrum of Si NWs

Más información

ID de Registro: 20563
Identificador DC: http://oa.upm.es/20563/
Identificador OAI: oai:oa.upm.es:20563
Depositado por: Memoria Investigacion
Depositado el: 08 Oct 2013 16:23
Ultima Modificación: 21 Abr 2016 23:24
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