Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Garcia Tabares Valdivieso, Elisa; Martín Martín, Diego; García Vara, Iván; Lelievre, Jean Francoise y Rey-Stolle Prado, Ignacio (2012). Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology. En: "8th International Conference on Concentrating Photovoltaic Systems: CPV-8", 16/04/2013 - 18/04/2013, Toledo, España. pp.. https://doi.org/10.1063/1.4753821.

Descripción

Título: Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology
Autor/es:
  • Garcia Tabares Valdivieso, Elisa
  • Martín Martín, Diego
  • García Vara, Iván
  • Lelievre, Jean Francoise
  • Rey-Stolle Prado, Ignacio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 8th International Conference on Concentrating Photovoltaic Systems: CPV-8
Fechas del Evento: 16/04/2013 - 18/04/2013
Lugar del Evento: Toledo, España
Título del Libro: International Conference on Concentrating Photovoltaic Systems: CPV-8
Fecha: 2012
Materias:
Palabras Clave Informales: gallium compounds, III-V semiconductors, MOCVD coatings, nucleation, passivation, solar cells, vapour phase epitaxial growth
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Más información

ID de Registro: 20675
Identificador DC: http://oa.upm.es/20675/
Identificador OAI: oai:oa.upm.es:20675
Identificador DOI: 10.1063/1.4753821
Depositado por: Memoria Investigacion
Depositado el: 08 Oct 2013 19:09
Ultima Modificación: 21 Abr 2016 23:28
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