Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Garcia Tabares Valdivieso, Elisa and Martín Martín, Diego and García Vara, Iván and Lelievre, Jean Francoise and Rey-Stolle Prado, Ignacio (2012). Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology. In: "8th International Conference on Concentrating Photovoltaic Systems: CPV-8", 16/04/2013 - 18/04/2013, Toledo, España. pp.. https://doi.org/10.1063/1.4753821.

Description

Title: Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology
Author/s:
  • Garcia Tabares Valdivieso, Elisa
  • Martín Martín, Diego
  • García Vara, Iván
  • Lelievre, Jean Francoise
  • Rey-Stolle Prado, Ignacio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 8th International Conference on Concentrating Photovoltaic Systems: CPV-8
Event Dates: 16/04/2013 - 18/04/2013
Event Location: Toledo, España
Title of Book: International Conference on Concentrating Photovoltaic Systems: CPV-8
Date: 2012
Subjects:
Freetext Keywords: gallium compounds, III-V semiconductors, MOCVD coatings, nucleation, passivation, solar cells, vapour phase epitaxial growth
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

More information

Item ID: 20675
DC Identifier: http://oa.upm.es/20675/
OAI Identifier: oai:oa.upm.es:20675
DOI: 10.1063/1.4753821
Deposited by: Memoria Investigacion
Deposited on: 08 Oct 2013 19:09
Last Modified: 21 Apr 2016 23:28
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