InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

Ramiro Gonzalez, Iñigo and Antolín Fernández, Elisa and Steer, M.J. and García-Linares Fontes, Pablo and Hernández Martín, Estela and Artacho Huertas, Irene and López Estrada, Esther and Ben, T. and Ripalda Cobián, Jose María and Molina Rubio, Sergio Ignacio and Briones Fernández-Pola, Fernando and Stanley, Colin and Martí Vega, Antonio and Luque López, Antonio (2012). InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps. In: "38th IEEE Photovoltaic Specialists Conference (PVSC), 2012", 03/06/2012 - 08/06/2012, Austin (TE) EEUU. ISBN 978-1-4673-0064-3. pp. 652-656. https://doi.org/10.1109/pvsc.2012.6317694.

Description

Title: InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
Author/s:
  • Ramiro Gonzalez, Iñigo
  • Antolín Fernández, Elisa
  • Steer, M.J.
  • García-Linares Fontes, Pablo
  • Hernández Martín, Estela
  • Artacho Huertas, Irene
  • López Estrada, Esther
  • Ben, T.
  • Ripalda Cobián, Jose María
  • Molina Rubio, Sergio Ignacio
  • Briones Fernández-Pola, Fernando
  • Stanley, Colin
  • Martí Vega, Antonio
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012
Event Dates: 03/06/2012 - 08/06/2012
Event Location: Austin (TE) EEUU
Title of Book: Proceedings of 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012
Date: June 2012
ISBN: 978-1-4673-0064-3
Subjects:
Freetext Keywords: Novel concepts, intermediate band solar cells, quantum dots, carrier escape
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB)

Abstract

In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low temperature. At room temperature (RT), however, thermal escape/relaxation between the conduction band (CB) and the IB prevents voltage preservation. To improve this situation, we have produced and characterized the first reported InAs/AlGaAs QD-based IBSCs. For an Al content of 25% in the host material, we have measured an activation energy of 361 meV for the thermal carrier escape. This energy is about 250 meV higher than the energies found in the literature for InAs/GaAs QD, and almost 140 meV higher than the activation energy obtained in our previous InAs/GaAs QD-IBSC prototypes including a specifically designed QD capping layer. This high value is responsible for the suppression of the SBG quantum efficiency under monochromatic illumination at around 220 K. We suggest that, if the energy split between the CB and the IB is large enough, activation energies as high as to suppress thermal carrier escape at room temperature (RT) can be achieved. In this respect, the InAs/AlGaAs system offers new possibilities to overcome some of the problems encountered in InAs/GaAs and opens the path for QD-IBSC devices capable of achieving high efficiency at RT.

More information

Item ID: 20776
DC Identifier: http://oa.upm.es/20776/
OAI Identifier: oai:oa.upm.es:20776
DOI: 10.1109/pvsc.2012.6317694
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6317694
Deposited by: Memoria Investigacion
Deposited on: 13 Oct 2013 07:57
Last Modified: 22 Sep 2014 11:21
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM