InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

Ramiro Gonzalez, Iñigo; Antolín Fernández, Elisa; Steer, M.J.; García-Linares Fontes, Pablo; Hernández Martín, Estela; Artacho Huertas, Irene; López Estrada, Esther; Ben, T.; Ripalda Cobián, Jose María; Molina Rubio, Sergio Ignacio; Briones Fernández-Pola, Fernando; Stanley, Colin; Martí Vega, Antonio y Luque López, Antonio (2012). InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps. En: "38th IEEE Photovoltaic Specialists Conference (PVSC), 2012", 03/06/2012 - 08/06/2012, Austin (TE) EEUU. ISBN 978-1-4673-0064-3. pp. 652-656. https://doi.org/10.1109/pvsc.2012.6317694.

Descripción

Título: InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
Autor/es:
  • Ramiro Gonzalez, Iñigo
  • Antolín Fernández, Elisa
  • Steer, M.J.
  • García-Linares Fontes, Pablo
  • Hernández Martín, Estela
  • Artacho Huertas, Irene
  • López Estrada, Esther
  • Ben, T.
  • Ripalda Cobián, Jose María
  • Molina Rubio, Sergio Ignacio
  • Briones Fernández-Pola, Fernando
  • Stanley, Colin
  • Martí Vega, Antonio
  • Luque López, Antonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012
Fechas del Evento: 03/06/2012 - 08/06/2012
Lugar del Evento: Austin (TE) EEUU
Título del Libro: Proceedings of 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012
Fecha: Junio 2012
ISBN: 978-1-4673-0064-3
Materias:
Palabras Clave Informales: Novel concepts, intermediate band solar cells, quantum dots, carrier escape
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low temperature. At room temperature (RT), however, thermal escape/relaxation between the conduction band (CB) and the IB prevents voltage preservation. To improve this situation, we have produced and characterized the first reported InAs/AlGaAs QD-based IBSCs. For an Al content of 25% in the host material, we have measured an activation energy of 361 meV for the thermal carrier escape. This energy is about 250 meV higher than the energies found in the literature for InAs/GaAs QD, and almost 140 meV higher than the activation energy obtained in our previous InAs/GaAs QD-IBSC prototypes including a specifically designed QD capping layer. This high value is responsible for the suppression of the SBG quantum efficiency under monochromatic illumination at around 220 K. We suggest that, if the energy split between the CB and the IB is large enough, activation energies as high as to suppress thermal carrier escape at room temperature (RT) can be achieved. In this respect, the InAs/AlGaAs system offers new possibilities to overcome some of the problems encountered in InAs/GaAs and opens the path for QD-IBSC devices capable of achieving high efficiency at RT.

Más información

ID de Registro: 20776
Identificador DC: http://oa.upm.es/20776/
Identificador OAI: oai:oa.upm.es:20776
Identificador DOI: 10.1109/pvsc.2012.6317694
URL Oficial: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6317694
Depositado por: Memoria Investigacion
Depositado el: 13 Oct 2013 07:57
Ultima Modificación: 22 Sep 2014 11:21
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