Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering

Rubia López, Miguel Ángel de la and Leret Molto, Pilar and Campo García, Ángel Adolfo del and Alonso, Roberto Emilio and López García, Alberto Raúl and Fernández Lozano, José Francisco and Frutos Vaquerizo, José de (2012). Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering. "Journal of the European Ceramic Society", v. 32 (n. 8); pp. 1691-1699. ISSN 0955-2219. https://doi.org/10.1016/j.jeurceramsoc.2012.01.024.

Description

Title: Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
Author/s:
  • Rubia López, Miguel Ángel de la
  • Leret Molto, Pilar
  • Campo García, Ángel Adolfo del
  • Alonso, Roberto Emilio
  • López García, Alberto Raúl
  • Fernández Lozano, José Francisco
  • Frutos Vaquerizo, José de
Item Type: Article
Título de Revista/Publicación: Journal of the European Ceramic Society
Date: July 2012
ISSN: 0955-2219
Volume: 32
Subjects:
Freetext Keywords: CaCu3Ti4012; Reactive sintering; Conventional synthesis; Dielectric properties; HfO2
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Física Aplicada a las Tecnologías de la Información [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

CaCu3(Ti4xHfx)O12 ceramics (JC = 0.04, 0.1 and 0.2) were prepared by conventional synthesis (CS) and through reactive sintering (RS), in which synthesis and sintering of the material take place in one single step. The microstructure and the dielectric properties of Hf-doped CCTO (CCTOHf) have been studied by XRD, FE-SEM, AFM, Raman and impedance spectroscopy (IS) in order to correlate the structure, microstructure and the electrical properties. Samples prepared by reactive sintering show slightly higher dielectric constant than those prepared by conventional synthesis in the same way than the pure CCTO. Dielectric constant and dielectric losses decrease slightly increasing Hf content. For CCTOHf ceramics with x> 0.04 for CS and x> 0.1 for RS, a secondary phase HfTi04 appears. As expected, the reactive sintering processing method allows a higher incorporation of Hf in the CCTO lattice than the conventional synthesis one.

More information

Item ID: 20793
DC Identifier: http://oa.upm.es/20793/
OAI Identifier: oai:oa.upm.es:20793
DOI: 10.1016/j.jeurceramsoc.2012.01.024
Official URL: http://www.sciencedirect.com/science/article/pii/S0955221912000386
Deposited by: Memoria Investigacion
Deposited on: 13 Oct 2013 08:40
Last Modified: 22 Sep 2014 11:21
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