On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings

Ramos Cabal, Alba; Cañizo Nadal, Carlos del; Valdehita Torija, Javier; Zamorano Saavedra, Juan Carlos; Rodríguez Rodríguez, Araceli y Luque López, Antonio (2012). On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings. En: "Silicon for the Chemical and Solar Industry XII", 25/06/2012 - 29/06/2012, Bergen-Ulvik, Noruega. pp. 1-12.

Descripción

Título: On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings
Autor/es:
  • Ramos Cabal, Alba
  • Cañizo Nadal, Carlos del
  • Valdehita Torija, Javier
  • Zamorano Saavedra, Juan Carlos
  • Rodríguez Rodríguez, Araceli
  • Luque López, Antonio
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: Silicon for the Chemical and Solar Industry XII
Fechas del Evento: 25/06/2012 - 29/06/2012
Lugar del Evento: Bergen-Ulvik, Noruega
Título del Libro: Silicon for the Chemical and Solar Industry XII
Fecha: 2012
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (450kB)

Resumen

Polysilicon cost impacts significantly on the photovoltaics (PV) cost and on the energy payback time. Nowadays, the besetting production process is the so called Siemens process, polysilicon deposition by chemical vapor deposition (CVD) from Trichlorosilane. Polysilicon purification level for PV is to a certain extent less demanding that for microelectronics. At the Instituto de Energía Solar (IES) research on this subject is performed through a Siemens process-type laboratory reactor. Through the laboratory CVD prototype at the IES laboratories, valuable information about the phenomena involved in the polysilicon deposition process and the operating conditions is obtained. Polysilicon deposition by CVD is a complex process due to the big number of parameters involved. A study on the influence of temperature and inlet gas mixture composition on the polysilicon deposition growth rate, based on experimental experience, is shown. Moreover, CVD process accounts for the largest contribution to the energy consumption of the polysilicon production. In addition, radiation phenomenon is the major responsible for low energetic efficiency of the whole process. This work presents a model of radiation heat loss, and the theoretical calculations are confirmed experimentally through a prototype reactor at our disposal, yielding a valuable know-how for energy consumption reduction at industrial Siemens reactors.

Más información

ID de Registro: 20836
Identificador DC: http://oa.upm.es/20836/
Identificador OAI: oai:oa.upm.es:20836
Depositado por: Memoria Investigacion
Depositado el: 13 Oct 2013 09:51
Ultima Modificación: 22 Sep 2014 11:21
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM