On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings

Ramos Cabal, Alba and Cañizo Nadal, Carlos del and Valdehita Torija, Javier and Zamorano Saavedra, Juan Carlos and Rodríguez Rodríguez, Araceli and Luque López, Antonio (2012). On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings. In: "Silicon for the Chemical and Solar Industry XII", 25/06/2012 - 29/06/2012, Bergen-Ulvik, Noruega. pp. 1-12.

Description

Title: On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings
Author/s:
  • Ramos Cabal, Alba
  • Cañizo Nadal, Carlos del
  • Valdehita Torija, Javier
  • Zamorano Saavedra, Juan Carlos
  • Rodríguez Rodríguez, Araceli
  • Luque López, Antonio
Item Type: Presentation at Congress or Conference (Article)
Event Title: Silicon for the Chemical and Solar Industry XII
Event Dates: 25/06/2012 - 29/06/2012
Event Location: Bergen-Ulvik, Noruega
Title of Book: Silicon for the Chemical and Solar Industry XII
Date: 2012
Subjects:
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Polysilicon cost impacts significantly on the photovoltaics (PV) cost and on the energy payback time. Nowadays, the besetting production process is the so called Siemens process, polysilicon deposition by chemical vapor deposition (CVD) from Trichlorosilane. Polysilicon purification level for PV is to a certain extent less demanding that for microelectronics. At the Instituto de Energía Solar (IES) research on this subject is performed through a Siemens process-type laboratory reactor. Through the laboratory CVD prototype at the IES laboratories, valuable information about the phenomena involved in the polysilicon deposition process and the operating conditions is obtained. Polysilicon deposition by CVD is a complex process due to the big number of parameters involved. A study on the influence of temperature and inlet gas mixture composition on the polysilicon deposition growth rate, based on experimental experience, is shown. Moreover, CVD process accounts for the largest contribution to the energy consumption of the polysilicon production. In addition, radiation phenomenon is the major responsible for low energetic efficiency of the whole process. This work presents a model of radiation heat loss, and the theoretical calculations are confirmed experimentally through a prototype reactor at our disposal, yielding a valuable know-how for energy consumption reduction at industrial Siemens reactors.

More information

Item ID: 20836
DC Identifier: http://oa.upm.es/20836/
OAI Identifier: oai:oa.upm.es:20836
Deposited by: Memoria Investigacion
Deposited on: 13 Oct 2013 09:51
Last Modified: 22 Sep 2014 11:21
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