High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates.

Cuerdo Bragado, Roberto and Calle Gómez, Fernando and Braña, A.F. and Cordier, Y. and Azize, M. and Baron, N. and Chenot, S. and Muñoz Merino, Elias (2008). High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates.. "Physica Status Solidi C Basic Solid State Physics", v. 5 (n. 6); pp. 1971-1973. ISSN 0370-1972. https://doi.org/10.1002/pssc.200778555.

Description

Title: High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates.
Author/s:
  • Cuerdo Bragado, Roberto
  • Calle Gómez, Fernando
  • Braña, A.F.
  • Cordier, Y.
  • Azize, M.
  • Baron, N.
  • Chenot, S.
  • Muñoz Merino, Elias
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi C Basic Solid State Physics
Date: May 2008
ISSN: 0370-1972
Volume: 5
Subjects:
Freetext Keywords: sapphire substrates, high temperature DC performance.
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

A study of the high temperature DC performance of nitride high electron mobility transistors (HEMTs) on Si(111) and sapphire substrates with different gate lengths is reported. All single gate transistors decrease their drain current (ID) and transconductance (gm) from room temperature (RT) up to 350 ºC, mainly due to the electron mobility reduction by optical phonon scattering. At RT, HEMTs on Si(111) present higher ID and gm than transistors on sapphire, probably related to their lower self-heating. As devices are heated, these differences tend to disappear, indicating that the substrate thermal conductivity becomes less important. Compact devices have low relative reduction in ID and gm values with temperature, since shorter gate lengths lead to higher fields under the gate and lower temperature dependence of the drift velocity

More information

Item ID: 2134
DC Identifier: http://oa.upm.es/2134/
OAI Identifier: oai:oa.upm.es:2134
DOI: 10.1002/pssc.200778555
Official URL: http://www3.interscience.wiley.com/journal/119139597/issue
Deposited by: Memoria Investigacion
Deposited on: 03 Feb 2010 10:22
Last Modified: 20 Apr 2016 11:54
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