Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films

Fuentes Iriarte, Gonzalo; Rodriguez Madrid, Juan y Calle Gómez, Fernando (2011). Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films. "Microsystem Technologies", v. 17 (n. 3); pp. 381-386. ISSN 0946-7076. https://doi.org/10.1007/s00542-010-1198-2.

Descripción

Título: Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films
Autor/es:
  • Fuentes Iriarte, Gonzalo
  • Rodriguez Madrid, Juan
  • Calle Gómez, Fernando
Tipo de Documento: Artículo
Título de Revista/Publicación: Microsystem Technologies
Fecha: Marzo 2011
Volumen: 17
Materias:
Escuela: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm.

Más información

ID de Registro: 21572
Identificador DC: http://oa.upm.es/21572/
Identificador OAI: oai:oa.upm.es:21572
Identificador DOI: 10.1007/s00542-010-1198-2
URL Oficial: http://link.springer.com/article/10.1007%2Fs00542-010-1198-2
Depositado por: Memoria Investigacion
Depositado el: 26 Nov 2013 19:07
Ultima Modificación: 21 Abr 2016 12:13
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