Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films

Fuentes Iriarte, Gonzalo and Rodriguez Madrid, Juan and Calle Gómez, Fernando (2011). Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films. "Microsystem Technologies", v. 17 (n. 3); pp. 381-386. ISSN 0946-7076. https://doi.org/10.1007/s00542-010-1198-2.

Description

Title: Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films
Author/s:
  • Fuentes Iriarte, Gonzalo
  • Rodriguez Madrid, Juan
  • Calle Gómez, Fernando
Item Type: Article
Título de Revista/Publicación: Microsystem Technologies
Date: March 2011
ISSN: 0946-7076
Volume: 17
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm.

More information

Item ID: 21572
DC Identifier: http://oa.upm.es/21572/
OAI Identifier: oai:oa.upm.es:21572
DOI: 10.1007/s00542-010-1198-2
Official URL: http://link.springer.com/article/10.1007%2Fs00542-010-1198-2
Deposited by: Memoria Investigacion
Deposited on: 26 Nov 2013 19:07
Last Modified: 21 Apr 2016 12:13
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