A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy

Gacevic, Zarko and Gómez Hernández, Víctor Jesús and García Lepetit, Noemí and Soto Rodríguez, Paul and Bengoechea Encabo, Ana and Fernández Garrido, Sergio and Nötzel, R. and Calleja Pardo, Enrique (2013). A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy. "Journal of Crystal Growth", v. 364 ; pp. 123-127. ISSN 0003-6951. https://doi.org/10.1016/j.jcrysgro.2012.11.031.

Description

Title: A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
Author/s:
  • Gacevic, Zarko
  • Gómez Hernández, Víctor Jesús
  • García Lepetit, Noemí
  • Soto Rodríguez, Paul
  • Bengoechea Encabo, Ana
  • Fernández Garrido, Sergio
  • Nötzel, R.
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: February 2013
ISSN: 0003-6951
Volume: 364
Subjects:
Freetext Keywords: A1. Composition; A1. Growth diagram; A1. Strain; A1. Surface morphology; A3. Molecular beam; B1. InGaN
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

he composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth temperature (460–645 °C) and impinging In flux. Three different growth regimes: nitrogen-rich, metal-rich and intermediate metal-rich, are clearly identified and found to be in correlation with surface morphology and strain relaxation. Best epilayers’ quality is obtained when growing under intermediate metal-rich conditions, with 1–2 monolayers thick In ad-coverage. For a given In flux, the In incorporation decreases with increasing growth temperature due to InN thermal decomposition that follows an Arrhenius behavior with 1.84±0.12 eV activation energy.

More information

Item ID: 22671
DC Identifier: http://oa.upm.es/22671/
OAI Identifier: oai:oa.upm.es:22671
DOI: 10.1016/j.jcrysgro.2012.11.031
Official URL: http://www.sciencedirect.com/science/article/pii/S0022024812008287
Deposited by: Memoria Investigacion
Deposited on: 16 Mar 2014 11:02
Last Modified: 21 Apr 2016 17:40
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