Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Brazzini, Tommaso and Tadjer, Marko Jak and Gacevic, Zarko and Pandey, Saurabh and Cavallini, Anna and Behmenburg, H. and Giesen, C. and Heuken, M. and Calle Gómez, Fernando (2012). Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures. In: "International Workshop on Nitride Semiconductors (IWN2012)", 14/10/2012 - 19/10/2012, Sapporo, Japan. pp. 1-3.

Description

Title: Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
Author/s:
  • Brazzini, Tommaso
  • Tadjer, Marko Jak
  • Gacevic, Zarko
  • Pandey, Saurabh
  • Cavallini, Anna
  • Behmenburg, H.
  • Giesen, C.
  • Heuken, M.
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Other)
Event Title: International Workshop on Nitride Semiconductors (IWN2012)
Event Dates: 14/10/2012 - 19/10/2012
Event Location: Sapporo, Japan
Title of Book: International Workshop on Nitride Semiconductors (IWN2012)
Date: 2012
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time.

More information

Item ID: 22887
DC Identifier: http://oa.upm.es/22887/
OAI Identifier: oai:oa.upm.es:22887
Deposited by: Memoria Investigacion
Deposited on: 22 Mar 2014 12:23
Last Modified: 21 Apr 2016 20:48
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