Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

Brazzini, Tommaso and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Calle Gómez, Fernando (2012). Investigation of AlInN barrier ISFET structures with GaN capping for pH detection. In: "International Workshop on Nitride Semiconductors (IWN2012)", 14/10/2012 - 19/10/2012, Sapporo, Japan. pp. 1-3.

Description

Title: Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
Author/s:
  • Brazzini, Tommaso
  • Bengoechea Encabo, Ana
  • Sánchez García, Miguel Angel
  • Calle Gómez, Fernando
Item Type: Presentation at Congress or Conference (Other)
Event Title: International Workshop on Nitride Semiconductors (IWN2012)
Event Dates: 14/10/2012 - 19/10/2012
Event Location: Sapporo, Japan
Title of Book: International Workshop on Nitride Semiconductors (IWN2012)
Date: 2012
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents.

More information

Item ID: 22896
DC Identifier: http://oa.upm.es/22896/
OAI Identifier: oai:oa.upm.es:22896
Deposited by: Memoria Investigacion
Deposited on: 23 Mar 2014 09:41
Last Modified: 21 Apr 2016 20:50
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