Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell.

Antolín Fernández, Elisa; Martí Vega, Antonio; Stanley, Colin; Farmer, C.D.; Cánovas Díaz, Enrique; López Martínez, Nair; García-Linares Fontes, Pablo y Luque López, Antonio (2008). Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell.. "Thin Solid Films", v. 516 (n. 20); pp. 6919-6923. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2007.12.061.

Descripción

Título: Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell.
Autor/es:
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • Stanley, Colin
  • Farmer, C.D.
  • Cánovas Díaz, Enrique
  • López Martínez, Nair
  • García-Linares Fontes, Pablo
  • Luque López, Antonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Thin Solid Films
Fecha: Agosto 2008
Volumen: 516
Materias:
Palabras Clave Informales: Intermediate band; Solar cells; Quantum dots
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (443kB) | Vista Previa

Resumen

Conceived to exceed the conversion efficiency of conventional photovoltaic devices, the intermediate band solar cell bases its operation on exploiting, besides the usual band-to-band optical transitions, the absorption of two sub-bandgap photons. For the present, the only technology used to implement an intermediate band in real devices has been the growth of an InAs/GaAs quantum dot superlattice. In practice, the obtained material shows two limitations: the narrow energy gap between conduction and intermediate band and the appearance of growth defects due to the lattice stress. The consequences are the presence of non-radiative recombination mechanisms and the thermal escape of electrons from the intermediate to the conduction band, hindering the splitting of the quasi-Fermi levels associated with the intermediate and conduction bands and the observation of photocurrent associated with the two-photon absorption. By reducing the temperature at which the devices are characterised we have suppressed the parasitic thermal mechanisms and have succeeded in measuring the photocurrent caused by the absorption of two below bandgap photons. In this work, the characterization of this photocurrent at low temperature is presented and discussed.

Más información

ID de Registro: 2363
Identificador DC: http://oa.upm.es/2363/
Identificador OAI: oai:oa.upm.es:2363
Identificador DOI: 10.1016/j.tsf.2007.12.061
URL Oficial: http://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description#description
Depositado por: Memoria Investigacion
Depositado el: 19 Feb 2010 10:11
Ultima Modificación: 20 Abr 2016 12:05
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM