Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell.

Antolín Fernández, Elisa and Martí Vega, Antonio and Stanley, Colin and Farmer, C.D. and Cánovas Díaz, Enrique and López Martínez, Nair and García-Linares Fontes, Pablo and Luque López, Antonio (2008). Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell.. "Thin Solid Films", v. 516 (n. 20); pp. 6919-6923. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2007.12.061.

Description

Title: Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell.
Author/s:
  • Antolín Fernández, Elisa
  • Martí Vega, Antonio
  • Stanley, Colin
  • Farmer, C.D.
  • Cánovas Díaz, Enrique
  • López Martínez, Nair
  • García-Linares Fontes, Pablo
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: Thin Solid Films
Date: August 2008
ISSN: 0040-6090
Volume: 516
Subjects:
Freetext Keywords: Intermediate band; Solar cells; Quantum dots
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Conceived to exceed the conversion efficiency of conventional photovoltaic devices, the intermediate band solar cell bases its operation on exploiting, besides the usual band-to-band optical transitions, the absorption of two sub-bandgap photons. For the present, the only technology used to implement an intermediate band in real devices has been the growth of an InAs/GaAs quantum dot superlattice. In practice, the obtained material shows two limitations: the narrow energy gap between conduction and intermediate band and the appearance of growth defects due to the lattice stress. The consequences are the presence of non-radiative recombination mechanisms and the thermal escape of electrons from the intermediate to the conduction band, hindering the splitting of the quasi-Fermi levels associated with the intermediate and conduction bands and the observation of photocurrent associated with the two-photon absorption. By reducing the temperature at which the devices are characterised we have suppressed the parasitic thermal mechanisms and have succeeded in measuring the photocurrent caused by the absorption of two below bandgap photons. In this work, the characterization of this photocurrent at low temperature is presented and discussed.

More information

Item ID: 2363
DC Identifier: http://oa.upm.es/2363/
OAI Identifier: oai:oa.upm.es:2363
DOI: 10.1016/j.tsf.2007.12.061
Official URL: http://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description#description
Deposited by: Memoria Investigacion
Deposited on: 19 Feb 2010 10:11
Last Modified: 20 Apr 2016 12:05
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