Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells

Cánovas Díaz, Enrique; Martí Vega, Antonio; López Martínez, Nair; Antolín Fernández, Elisa; García-Linares Fontes, Pablo; Farmer, C.D.; Stanley, Colin y Luque López, Antonio (2008). Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells. "Thin Solid Films", v. 516 (n. 20); pp. 6943-6947. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2007.12.038.

Descripción

Título: Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells
Autor/es:
  • Cánovas Díaz, Enrique
  • Martí Vega, Antonio
  • López Martínez, Nair
  • Antolín Fernández, Elisa
  • García-Linares Fontes, Pablo
  • Farmer, C.D.
  • Stanley, Colin
  • Luque López, Antonio
Tipo de Documento: Artículo
Título de Revista/Publicación: Thin Solid Films
Fecha: Agosto 2008
Volumen: 516
Materias:
Palabras Clave Informales: Quantum dots; intermediate band; solar cells; photoreflectance
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Intermediate band materials rely on the creation of a new electronic band within the bandgap of a conventional semiconductor that is isolated from the conduction and valence band by a true zero density of states. Due to the presence of the intermediate band, a solar cell manufactured using these materials is capable of producing additional photocurrent, thanks to the absorption of photons with energy lower than the conventional bandgap. In this respect, the characterization of these materials by suitable techniques becomes a key element in the development of the new photovoltaic devices called intermediate band solar cells. The technique of photoreflectance is particularly suited to this purpose because it is contact-less and allows the characterization of the material without the need of actually manufacturing a complete device. Using room temperature photoreflectance we have analyzed intermediate band materials based on quantum dots and have been able to identify the energy levels involved. Also, from the photoreflectance data we have demonstrated the overlap of the wave-functions defined by the quantum dots.

Más información

ID de Registro: 2364
Identificador DC: http://oa.upm.es/2364/
Identificador OAI: oai:oa.upm.es:2364
Identificador DOI: 10.1016/j.tsf.2007.12.038
URL Oficial: http://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description#description
Depositado por: Memoria Investigacion
Depositado el: 19 Feb 2010 11:24
Ultima Modificación: 20 Abr 2016 12:05
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