Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells

Cánovas Díaz, Enrique and Martí Vega, Antonio and López Martínez, Nair and Antolín Fernández, Elisa and García-Linares Fontes, Pablo and Farmer, C.D. and Stanley, Colin and Luque López, Antonio (2008). Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells. "Thin Solid Films", v. 516 (n. 20); pp. 6943-6947. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2007.12.038.

Description

Title: Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells
Author/s:
  • Cánovas Díaz, Enrique
  • Martí Vega, Antonio
  • López Martínez, Nair
  • Antolín Fernández, Elisa
  • García-Linares Fontes, Pablo
  • Farmer, C.D.
  • Stanley, Colin
  • Luque López, Antonio
Item Type: Article
Título de Revista/Publicación: Thin Solid Films
Date: August 2008
ISSN: 0040-6090
Volume: 516
Subjects:
Freetext Keywords: Quantum dots; intermediate band; solar cells; photoreflectance
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Intermediate band materials rely on the creation of a new electronic band within the bandgap of a conventional semiconductor that is isolated from the conduction and valence band by a true zero density of states. Due to the presence of the intermediate band, a solar cell manufactured using these materials is capable of producing additional photocurrent, thanks to the absorption of photons with energy lower than the conventional bandgap. In this respect, the characterization of these materials by suitable techniques becomes a key element in the development of the new photovoltaic devices called intermediate band solar cells. The technique of photoreflectance is particularly suited to this purpose because it is contact-less and allows the characterization of the material without the need of actually manufacturing a complete device. Using room temperature photoreflectance we have analyzed intermediate band materials based on quantum dots and have been able to identify the energy levels involved. Also, from the photoreflectance data we have demonstrated the overlap of the wave-functions defined by the quantum dots.

More information

Item ID: 2364
DC Identifier: http://oa.upm.es/2364/
OAI Identifier: oai:oa.upm.es:2364
DOI: 10.1016/j.tsf.2007.12.038
Official URL: http://www.elsevier.com/wps/find/journaldescription.cws_home/504106/description#description
Deposited by: Memoria Investigacion
Deposited on: 19 Feb 2010 11:24
Last Modified: 20 Apr 2016 12:05
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