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Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

Alonso Alvarez, Diego and González Taboada, Alfonso and Ripalda Cobián, Jose María and Alén Millán, Benito and González Diez, M. Yolanda and González Soto, Luisa and García Martín, Jorge Miguel and Martí Vega, Antonio and Luque López, Antonio and Briones Fernández-Pola, Fernando and Sanchez, A.M. and Molina Rubio, Sergio Ignacio (2008) Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. Applied Physics Letters, 93 (12). 123114 -1 . ISSN 0003-6951

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Item Type:Article
Authors/Creators:
Creators NameCreators email (if known)
Alonso Alvarez, Diego
González Taboada, Alfonso
Ripalda Cobián, Jose María
Alén Millán, Benito
González Diez, M. Yolanda
González Soto, Luisa
García Martín, Jorge Miguel
Martí Vega, Antonio
Luque López, Antonio
Briones Fernández-Pola, Fernando
Sanchez, A.M.
Molina Rubio, Sergio Ignacio
Title:Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
Publisher:American Institute of Physics
Journal/Publication Title:Applied Physics Letters
Date:January 2008
Volume:93
Number:12
Department:Other
Faculty:E.T.S.I. Telecommunication (UPM)
Creative Commons licenses:Recognition - No derivative works - No commercial
Item ID:2383
Subjects:Renewable Energy
Telecommunications
Materials

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Official URL: http://scitation.aip.org/dbt/dbt.jsp?KEY=APPLAB&Volume=93&Issue=12

Abstract

In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.

Item Type:Article
Subjects:Renewable Energy
Telecommunications
Materials
Código ID:2383
Depositado Por:Memoria Investigacion
Depositado el:25 Feb 2010 12:32
Last Modified:17 Jan 2012 11:22

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