Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells

Cánovas Díaz, Enrique and Martí Vega, Antonio and Luque López, Antonio and Walukiewicz, W. (2008). Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells. "Applied Physics Letters", v. 93 (n. 17); pp. 174109-1. ISSN 0003-6951. https://doi.org/10.1063/1.3013570.

Description

Title: Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells
Author/s:
  • Cánovas Díaz, Enrique
  • Martí Vega, Antonio
  • Luque López, Antonio
  • Walukiewicz, W.
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: October 2008
Volume: 93
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

III-Nx–V1−x highly mismatched alloys HMAs have been proposed as promising material candidates for the development of high efficiency solar cells. According to the band anticrossing model, these alloys present a multiband character with an intermediate band within the otherwise fundamental bandgap that gives them the ability of improving the efficiency by means of below-bandgap photon absorption. The efficiency of GaNxAs1−x, GaNxP1−x, and their quaternaries InyGa1−yNxAs1−x and GaNxP1−x−yAsy is estimated theoretically versus nitrogen content in this letter. Low nitrogen content in the range of 1%–3.5% in the HMAs analyzed leads to theoretical efficiencies above 60%.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7211640IBPOWERUnspecifiedIntermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

More information

Item ID: 2384
DC Identifier: http://oa.upm.es/2384/
OAI Identifier: oai:oa.upm.es:2384
DOI: 10.1063/1.3013570
Official URL: http://scitation.aip.org/dbt/dbt.jsp?KEY=APPLAB&Volume=93&Issue=17
Deposited by: Memoria Investigacion
Deposited on: 25 Feb 2010 09:51
Last Modified: 31 Oct 2014 12:21
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