Transition Metal Substituted Indium Thiospinels: Towards an Ab Initio Understanding of the Intermediate Band Formation

Palacios Clemente, Pablo and Aguilera Bonet, Irene and Sánchez Noriega, Kefrén and Wahnón Benarroch, Perla (2008). Transition Metal Substituted Indium Thiospinels: Towards an Ab Initio Understanding of the Intermediate Band Formation. "Physical Review Letters", v. 101 (n. 4); pp.. ISSN 0031-9007. https://doi.org/10.1103/PhysRevLett.101.046403.

Description

Title: Transition Metal Substituted Indium Thiospinels: Towards an Ab Initio Understanding of the Intermediate Band Formation
Author/s:
  • Palacios Clemente, Pablo
  • Aguilera Bonet, Irene
  • Sánchez Noriega, Kefrén
  • Wahnón Benarroch, Perla
Item Type: Article
Título de Revista/Publicación: Physical Review Letters
Date: July 2008
ISSN: 0031-9007
Volume: 101
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview

Abstract

Results of density-functional calculations for indium thiospinel semiconductors substituted at octahedral sites with isolated transition metals (M _ Ti;V) show an isolated partially filled narrow band containing three t2g-type states per M atom inside the usual semiconductor band gap. Thanks to this electronic structure feature, these materials will allow the absorption of photons with energy below the band gap, in addition to the normal light absorption of a semiconductor. To our knowledge, we demonstrate for the first time the formation of an isolated intermediate electronic band structure through M substitution at octahedral sites in a semiconductor, leading to an enhancement of the absorption coefficient in both infrared and visible ranges of the solar spectrum. This electronic structure feature could be applied for developing a new third-generation photovoltaic cell.

More information

Item ID: 2411
DC Identifier: http://oa.upm.es/2411/
OAI Identifier: oai:oa.upm.es:2411
DOI: 10.1103/PhysRevLett.101.046403
Official URL: http://prl.aps.org/toc/PRL/v101/i4
Deposited by: Memoria Investigacion
Deposited on: 12 Mar 2010 10:39
Last Modified: 20 Apr 2016 12:06
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM