Band bending at In-rich InGaN surfaces

Bailey, L.R. and King, P.D.C. and Veal, T.D. and McConville, Chris F. and Pereiro Viterbo, Juan and Grandal Quintana, Javier and Sánchez García, Miguel Angel and Muñoz Merino, Elias and Calleja Pardo, Enrique (2008). Band bending at In-rich InGaN surfaces. "Journal of Applied Physics", v. 104 (n. 11); pp.. ISSN 0021-8979.


Title: Band bending at In-rich InGaN surfaces
  • Bailey, L.R.
  • King, P.D.C.
  • Veal, T.D.
  • McConville, Chris F.
  • Pereiro Viterbo, Juan
  • Grandal Quintana, Javier
  • Sánchez García, Miguel Angel
  • Muñoz Merino, Elias
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: January 2008
Volume: 104
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1−xN alloys with a composition range of 0.39 ≤ x ≤ 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson’s equation within a modified Thomas–Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0×1012 to 1.5×1013 cm−2. The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations.

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Item ID: 2548
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Deposited by: Memoria Investigacion
Deposited on: 15 Mar 2010 09:46
Last Modified: 20 Apr 2016 12:12
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