Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs

Cuerdo Bragado, Roberto and Pei, Y. and Recht, F. and Fichtenbaum, N. and Keller, S. and DenBaars, S.P. and Calle Gómez, Fernando and Mishra, U.K. (2008). Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs. "Physica Status Solidi C", v. 5 (n. 9); pp. 2994-2997. ISSN 0370-1972. https://doi.org/10.1002/pssc.200779240.

Description

Title: Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs
Author/s:
  • Cuerdo Bragado, Roberto
  • Pei, Y.
  • Recht, F.
  • Fichtenbaum, N.
  • Keller, S.
  • DenBaars, S.P.
  • Calle Gómez, Fernando
  • Mishra, U.K.
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi C
Date: July 2008
Volume: 5
Subjects:
Freetext Keywords: low temperature DC, RF performance, temperatures,parasitic resistances
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (249kB) | Preview

Abstract

A study of the low temperature DC and RF performance of deep submicron AlGaN/GaN high electron mobility transistors (HEMTs) is reported. From 300 K to 100 K both extrinsic transconductance and drain current increase by 30%, mainly due to the lowering of the optical phonon scattering that allows higher electron mobility. Source and drain resistances improve too, which contributes to the 15-20% increase of ft and fmax. The low temperature small signal model has also been extracted accurately at every 50 K. Inductances and capacitances remain constant in the range of temperatures measured. The intrinsic transconductance can be also considered temperature independent, but the output conductance decreases from 300 K to 100 K indicating a better confinement of the 2DEG. The HEMT performance obtained at 100 K can be reached at room temperature by reducing the parasitic resistances and improving the GaN buffer isolation.

More information

Item ID: 2565
DC Identifier: http://oa.upm.es/2565/
OAI Identifier: oai:oa.upm.es:2565
DOI: 10.1002/pssc.200779240
Official URL: http://www3.interscience.wiley.com/journal/120735622/issue
Deposited by: Memoria Investigacion
Deposited on: 15 Apr 2010 11:32
Last Modified: 20 Apr 2016 12:13
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM