Effect of Sb incorporation on the electronic structure of InAs quantum dots

González Taboada, Alfonso and Llorens, J.M. and Alonso Alvarez, Diego and Alén, B. and Rivera de Mena, Antonio and González, Yolanda and Ripalda Cobián, Jose María (2013). Effect of Sb incorporation on the electronic structure of InAs quantum dots. "Physical Review B", v. 88 ; pp.. ISSN 1550-235X. https://doi.org/10.1103/PhysRevB.88.085308.

Description

Title: Effect of Sb incorporation on the electronic structure of InAs quantum dots
Author/s:
  • González Taboada, Alfonso
  • Llorens, J.M.
  • Alonso Alvarez, Diego
  • Alén, B.
  • Rivera de Mena, Antonio
  • González, Yolanda
  • Ripalda Cobián, Jose María
Item Type: Article
Título de Revista/Publicación: Physical Review B
Date: August 2013
Volume: 88
Subjects:
Faculty: Instituto de Fusión Nuclear (UPM)
Department: Ingeniería Nuclear [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.

More information

Item ID: 25706
DC Identifier: http://oa.upm.es/25706/
OAI Identifier: oai:oa.upm.es:25706
DOI: 10.1103/PhysRevB.88.085308
Official URL: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.88.085308
Deposited by: Memoria Investigacion
Deposited on: 15 Apr 2015 18:11
Last Modified: 15 Apr 2015 18:11
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