Effect of Sb incorporation on the electronic structure of InAs quantum dots

González Taboada, Alfonso; Llorens, J.M.; Alonso Alvarez, Diego; Alén, B.; Rivera de Mena, Antonio; González, Yolanda y Ripalda Cobián, Jose María (2013). Effect of Sb incorporation on the electronic structure of InAs quantum dots. "Physical Review B", v. 88 ; pp.. ISSN 1550-235X. https://doi.org/10.1103/PhysRevB.88.085308.

Descripción

Título: Effect of Sb incorporation on the electronic structure of InAs quantum dots
Autor/es:
  • González Taboada, Alfonso
  • Llorens, J.M.
  • Alonso Alvarez, Diego
  • Alén, B.
  • Rivera de Mena, Antonio
  • González, Yolanda
  • Ripalda Cobián, Jose María
Tipo de Documento: Artículo
Título de Revista/Publicación: Physical Review B
Fecha: Agosto 2013
Volumen: 88
Materias:
Escuela: Instituto de Fusión Nuclear (UPM)
Departamento: Ingeniería Nuclear [hasta 2014]
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (1MB)

Resumen

On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.

Más información

ID de Registro: 25706
Identificador DC: http://oa.upm.es/25706/
Identificador OAI: oai:oa.upm.es:25706
Identificador DOI: 10.1103/PhysRevB.88.085308
URL Oficial: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.88.085308
Depositado por: Memoria Investigacion
Depositado el: 15 Abr 2015 18:11
Ultima Modificación: 15 Abr 2015 18:11
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM