Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Fernández-Garrido, Sergio and Redondo-Cubero, Andrés and Gago, R. and Bertram, F. and Christen, J. and Luna García de la Infanta, Esperanza and Trampert, Achim and Pereiro Viterbo, Juan and Muñoz Merino, Elias and Calleja Pardo, Enrique (2008). Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy. "Journal of Applied Physics", v. 104 (n. 8); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2999564.

Description

Title: Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
Author/s:
  • Fernández-Garrido, Sergio
  • Redondo-Cubero, Andrés
  • Gago, R.
  • Bertram, F.
  • Christen, J.
  • Luna García de la Infanta, Esperanza
  • Trampert, Achim
  • Pereiro Viterbo, Juan
  • Muñoz Merino, Elias
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: October 2008
ISSN: 0021-8979
Volume: 104
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Indium incorporation into wurtzite (0001)-oriented InxAlyGa1−x−yN layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565–635 °C) and the AlN mole fraction (0.01<y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In–N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM

More information

Item ID: 2589
DC Identifier: http://oa.upm.es/2589/
OAI Identifier: oai:oa.upm.es:2589
DOI: 10.1063/1.2999564
Official URL: http://jap.aip.org/japiau/v104/i8
Deposited by: Memoria Investigacion
Deposited on: 23 Mar 2010 12:15
Last Modified: 20 Apr 2016 12:14
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