Bowing of the band gap pressure coefficients in InGaN alloys

Franssen, G.; Gorczyca, l.; Suski, T.; Kamińska, A.; Pereiro Viterbo, Juan; Muñoz Merino, Elias; Lliopoulus, E.; Georgakilas, A.; Che, S.B.; Ishitani, Y.; Yoshikawa, A.; Christensen, N.E. y Svane, A. (2008). Bowing of the band gap pressure coefficients in InGaN alloys. "Journal of Applied Physics", v. 103 (n. 3); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.2837072.

Descripción

Título: Bowing of the band gap pressure coefficients in InGaN alloys
Autor/es:
  • Franssen, G.
  • Gorczyca, l.
  • Suski, T.
  • Kamińska, A.
  • Pereiro Viterbo, Juan
  • Muñoz Merino, Elias
  • Lliopoulus, E.
  • Georgakilas, A.
  • Che, S.B.
  • Ishitani, Y.
  • Yoshikawa, A.
  • Christensen, N.E.
  • Svane, A.
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Applied Physics
Fecha: Febrero 2008
Volumen: 103
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The hydrostatic pressure dependence of photoluminescence, dEPL/dp, of InxGa1−xN epilayers has been measured in the full composition range 0_x_1. Furthermore, ab initio calculations of the band gap pressure coefficient dEG/dp were performed. Both the experimental dEPL/dp values and calculated dEG/dp results show pronounced bowing and we find that the pressure coefficients have a nearly constant value of about 25 meV/GPa for epilayers with x_0.4 and a relatively steep dependence for x_0.4. On the basis of the agreement of the observed PL pressure coefficient with our calculations, we confirm that band-to-band recombination processes are responsible for PL emission and that no localized states are involved. Moreover, the good agreement between the experimentally determined dEPL/dp and the theoretical curve of dEG/dp indicates that the hydrostatic pressure dependence of PL measurements can be used to quantify changes of the band gap of the InGaN ternary alloy under pressure, demonstrating that the disorder-related Stokes shift in InGaN does not induce a significant difference between dEPL/dp and dEG/dp. This information is highly relevant for the correct analysis of pressure measurements

Más información

ID de Registro: 2598
Identificador DC: http://oa.upm.es/2598/
Identificador OAI: oai:oa.upm.es:2598
Identificador DOI: 10.1063/1.2837072
URL Oficial: http://jap.aip.org/japiau/v103/i3
Depositado por: Memoria Investigacion
Depositado el: 23 Mar 2010 09:47
Ultima Modificación: 20 Abr 2016 12:15
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