Local vibration modes and nitrogen incorporation in AlGaAs: N layers

Gallardo Velasco, Eva María and Lazic, Snezana and Calleja Pardo, José Manuel and Miguel-Sanchez, J. and Montes Bajo, Miguel and Hierro Cano, Adrián and Gargallo Caballero, Raquel and Fernández González, Alvaro de Guzmán and Muñoz Merino, Elias and Teweldeberhan, A.M. and Fahy, S. (2008). Local vibration modes and nitrogen incorporation in AlGaAs: N layers. "Physica Status Solidi B-Basic Solid State Physics", v. 5 (n. 6); pp. 2345-2348. ISSN 0370-1972. https://doi.org/10.1002/pssc.200778487.

Description

Title: Local vibration modes and nitrogen incorporation in AlGaAs: N layers
Author/s:
  • Gallardo Velasco, Eva María
  • Lazic, Snezana
  • Calleja Pardo, José Manuel
  • Miguel-Sanchez, J.
  • Montes Bajo, Miguel
  • Hierro Cano, Adrián
  • Gargallo Caballero, Raquel
  • Fernández González, Alvaro de Guzmán
  • Muñoz Merino, Elias
  • Teweldeberhan, A.M.
  • Fahy, S.
Item Type: Article
Título de Revista/Publicación: Physica Status Solidi B-Basic Solid State Physics
Date: May 2008
ISSN: 0370-1972
Volume: 5
Subjects:
Freetext Keywords: Local vibration, nitrogen, AlGaAs, LVMs spectra
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (185kB) | Preview

Abstract

Raman scattering measurements in dilute AlGaAs:N films grown by plasma-assisted molecular beam epitaxy on (100) GaAs substrates reveal strong local vibration modes (LVM) associated to N complexes. The LVM observed frequencies between 325 and 540 cm–1 are in good agreement with density functional theory supercell calculations of AlnGa4–nN complexes (n = 1,2,3,4). We find that the observed LVMs correspond to all n values including Al4N. The LVMs spectra are resonant at energies around 1.85 eV. The values of the extended phonon frequencies of the ternary compound (GaAs and AlAs-like) reveal changes in the N distribution depending on the growth conditions: A transition from random- to nonrandom nitrogen distribution is observed upon increasing the growth temperature. Our results confirm the preferential bonding of N to Al in AlGaAs:N, due to the higher Al-N bond strength as compared to the Ga-N bond.

More information

Item ID: 2602
DC Identifier: http://oa.upm.es/2602/
OAI Identifier: oai:oa.upm.es:2602
DOI: 10.1002/pssc.200778487
Official URL: http://www3.interscience.wiley.com/journal/119139597/issue
Deposited by: Memoria Investigacion
Deposited on: 14 Apr 2010 10:11
Last Modified: 20 Apr 2016 12:15
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM