The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures

Gargallo Caballero, Raquel and Miguel-Sanchez, J. and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián and Muñoz Merino, Elias (2008). The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures. "Journal of Physics D - Applied Physics", v. 41 (n. 6); pp.. ISSN 0022-3727. https://doi.org/10.1088/0022-3727/41/6/065413.

Description

Title: The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
Author/s:
  • Gargallo Caballero, Raquel
  • Miguel-Sanchez, J.
  • Fernández González, Alvaro de Guzmán
  • Hierro Cano, Adrián
  • Muñoz Merino, Elias
Item Type: Article
Título de Revista/Publicación: Journal of Physics D - Applied Physics
Date: March 2008
Volume: 41
Subjects:
Freetext Keywords: Condensed matter: electrical, magnetic and optical Semiconductors surfaces, interfaces and thin films condensed matter: structural, mechanical and thermal nanoscale science and low-D systems
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The effect of post-growth rapid thermal annealing on the optical characteristics of InAsN/InGaAs dot-in-a-well DWELL structures grown by molecular beam epitaxy on GaAs(1 0 0) has been studied. InAs/InGaAs DWELL structures have been used as a reference. Photoluminescence measurements of these samples show similar optical effects, such as a blueshift of the peak wavelength and a reduction of the full width of at half maximum PL emission, in both types of structures up to an annealing temperature of 750 °C. Nevertheless, at 850 °C, these effects are much more pronounced in the structures with N. These results suggest that an additional As–N interdiffusion process inside the InAsN quantum dots plays a dominant role in these effects at high annealing temperatures (850 °C) on InAsN/InGaAs structures.

More information

Item ID: 2603
DC Identifier: http://oa.upm.es/2603/
OAI Identifier: oai:oa.upm.es:2603
DOI: 10.1088/0022-3727/41/6/065413
Official URL: http://iopscience.iop.org/0022-3727/41/6
Deposited by: Memoria Investigacion
Deposited on: 22 Mar 2010 13:28
Last Modified: 20 Apr 2016 12:15
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