Experimental verification of intermediate band formation on titanium-implanted silicon

Castán Lanaspa, Helena; Perez, E.; García García, Héctor; Dueñas, S.; Bailón Vega, Luis Alberto; Olea Ariza, Javier; Pastor Pastor, David; García Hemme, Eric; Irigoyen Irigoyen, Maite y González Díaz, Germán (2013). Experimental verification of intermediate band formation on titanium-implanted silicon. "Journal of Applied Physics", v. 113 (n. 2); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4774241.

Descripción

Título: Experimental verification of intermediate band formation on titanium-implanted silicon
Autor/es:
  • Castán Lanaspa, Helena
  • Perez, E.
  • García García, Héctor
  • Dueñas, S.
  • Bailón Vega, Luis Alberto
  • Olea Ariza, Javier
  • Pastor Pastor, David
  • García Hemme, Eric
  • Irigoyen Irigoyen, Maite
  • González Díaz, Germán
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of Applied Physics
Fecha: Enero 2013
Volumen: 113
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28?eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction.

Más información

ID de Registro: 26097
Identificador DC: http://oa.upm.es/26097/
Identificador OAI: oai:oa.upm.es:26097
Identificador DOI: 10.1063/1.4774241
URL Oficial: http://scitation.aip.org/content/aip/journal/jap/113/2/10.1063/1.4774241?ver=pdfcov
Depositado por: Memoria Investigacion
Depositado el: 24 May 2014 08:16
Ultima Modificación: 22 Sep 2014 11:39
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