Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates

Lazic, Snezana and Gallardo Velasco, Eva María and Calleja Pardo, José Manuel and Agulló-Rueda, Fernando and Grandal Quintana, Javier and Sánchez García, Miguel Angel and Calleja Pardo, Enrique (2008). Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates. "Physica E: Low-dimensional Systems and Nanostructures", v. 40 (n. 6); pp. 2087-2090. ISSN 1386-9477. https://doi.org/10.1016/j.physe.2007.09.118.

Description

Title: Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates
Author/s:
  • Lazic, Snezana
  • Gallardo Velasco, Eva María
  • Calleja Pardo, José Manuel
  • Agulló-Rueda, Fernando
  • Grandal Quintana, Javier
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Physica E: Low-dimensional Systems and Nanostructures
Date: April 2008
ISSN: 1386-9477
Volume: 40
Subjects:
Freetext Keywords: InN nanocolumns; phonon–plasmon coupled modes; raman scattering
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Raman measurements in high-quality InN nanocolumns and thin films grown on both Si(1 1 1) and Si(1 0 0) substrates display a low-energy coupled LO phonon–plasmon mode together with uncoupled longitudinal optical (LO) phonons. The coupled mode is attributed to the spontaneous accumulation of electrons on the lateral surfaces of the nanocolumns, while the uncoupled ones originates from the inner part of the nanocolumns. The LO mode in the columnar samples appears close to the E1(LO) frequency. This indicates that most of the incident light is entering through the lateral surfaces of the nanocolumns, resulting in pure longitudinal–optical mode with quasi-E1 symmetry. For increasing growth temperature, the electron density decreases as the growth rate increases. The present results indicate that electron accumulation layers do not only form on polar surfaces of InN, but also occur on non-polar ones. According to recent calculations, we attribute the electron surface accumulation to the temperature dependent In-rich surface reconstruction on the nanocolumns sidewalls.

More information

Item ID: 2620
DC Identifier: http://oa.upm.es/2620/
OAI Identifier: oai:oa.upm.es:2620
DOI: 10.1016/j.physe.2007.09.118
Official URL: http://www.elsevier.com/wps/find/journaldescription.cws_home/600554/description#description
Deposited by: Memoria Investigacion
Deposited on: 18 Mar 2010 09:22
Last Modified: 20 Apr 2016 12:15
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