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Electronic properties of doped magnesium thioindate ternary spinel in the normal and in the inverse structure
Tablero Crespo, César
Electronic properties of doped magnesium thioindate ternary spinel in the normal and in the inverse structure.
"Journal of Applied Physics", v. 114
||Electronic properties of doped magnesium thioindate ternary spinel in the normal and in the inverse structure
|Título de Revista/Publicación:
||Journal of Applied Physics
||E.T.S.I. Telecomunicación (UPM)
|Creative Commons Licenses:
||Recognition - No derivative works - Non commercial
We present a theoretical study of the structural and electronic properties of the M-doped MgIn2S4 ternary spinel semiconductor with M = V, Cr, and Mn. All substitutions, in the normal and in the inverse structure, are analyzed. Some of these possible substitutions present intermediate-band states in the band gap with a different occupation for a spin component. It increases the possibilities of inter-band transitions and could be interesting for applications in optoelectronic devices. The contribution to, and the electronic configuration of, these intermediate bands for the octahedral and tetrahedral sites is analyzed and discussed. The study of the substitutional energies indicates that these substitutions are favorable. Comparison between the pure and doped hosts absorption coefficients shows that this deeper band opens up more photon absorption channels and could therefore increase the solar-light absorption with respect to the host.
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