Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

García Hemme, Eric and García Hernansanz, Rodrigo and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Alvaro del and Mártil de la Plaza, Ignacio and González Díaz, Germán and Wahnón Benarroch, Perla (2013). Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material. In: "Spanish Conference on Electron Devices (CDE)", 12/02/2013 - 14/02/2013, Valladolid, Spain. pp. 377-380.

Description

Title: Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
Author/s:
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Olea Ariza, Javier
  • Pastor Pastor, David
  • Prado Millán, Alvaro del
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
  • Wahnón Benarroch, Perla
Item Type: Presentation at Congress or Conference (Article)
Event Title: Spanish Conference on Electron Devices (CDE)
Event Dates: 12/02/2013 - 14/02/2013
Event Location: Valladolid, Spain
Title of Book: Spanish Conference on Electron Devices (CDE)
Date: 2013
Subjects:
Freetext Keywords: Titanium, vanadium, silicon, ion implantation, pulsed laser melting, intermediate band, solar cells
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

More information

Item ID: 26335
DC Identifier: http://oa.upm.es/26335/
OAI Identifier: oai:oa.upm.es:26335
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6481421
Deposited by: Memoria Investigacion
Deposited on: 01 Jun 2014 08:30
Last Modified: 22 Sep 2014 11:40
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