Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

García Hemme, Eric; García Hernansanz, Rodrigo; Olea Ariza, Javier; Pastor Pastor, David; Prado Millán, Alvaro del; Mártil de la Plaza, Ignacio; González Díaz, Germán y Wahnón Benarroch, Perla (2013). Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material. En: "Spanish Conference on Electron Devices (CDE)", 12/02/2013 - 14/02/2013, Valladolid, Spain. pp. 377-380.

Descripción

Título: Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
Autor/es:
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Olea Ariza, Javier
  • Pastor Pastor, David
  • Prado Millán, Alvaro del
  • Mártil de la Plaza, Ignacio
  • González Díaz, Germán
  • Wahnón Benarroch, Perla
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: Spanish Conference on Electron Devices (CDE)
Fechas del Evento: 12/02/2013 - 14/02/2013
Lugar del Evento: Valladolid, Spain
Título del Libro: Spanish Conference on Electron Devices (CDE)
Fecha: 2013
Materias:
Palabras Clave Informales: Titanium, vanadium, silicon, ion implantation, pulsed laser melting, intermediate band, solar cells
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Más información

ID de Registro: 26335
Identificador DC: http://oa.upm.es/26335/
Identificador OAI: oai:oa.upm.es:26335
URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6481421
Depositado por: Memoria Investigacion
Depositado el: 01 Jun 2014 08:30
Ultima Modificación: 22 Sep 2014 11:40
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