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González Díaz, Germán and Mártil de la Plaza, Ignacio and Prado Millán, Alvaro del and Pastor Pastor, David and Olea Ariza, Javier and García Hemme, Eric and García Hernansanz, Rodrigo and Wahnón Benarroch, Perla (2013). The intermediate band approach in the third solar cell generation context. In: "Spanish Conference on Electron Devices (CDE)", 12/02/2013 - 14/02/2013, Valladolid, Spain. pp. 337-340.
Title: | The intermediate band approach in the third solar cell generation context |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | Spanish Conference on Electron Devices (CDE) |
Event Dates: | 12/02/2013 - 14/02/2013 |
Event Location: | Valladolid, Spain |
Title of Book: | Spanish Conference on Electron Devices (CDE) |
Date: | 2013 |
Subjects: | |
Freetext Keywords: | Titanium, vanadium, silicon, ion implantation, pulsed laser melting, intermediate band, solar cells |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014] |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
Item ID: | 26626 |
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DC Identifier: | http://oa.upm.es/26626/ |
OAI Identifier: | oai:oa.upm.es:26626 |
Official URL: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6481401 |
Deposited by: | Memoria Investigacion |
Deposited on: | 25 Jun 2014 16:19 |
Last Modified: | 22 Sep 2014 11:42 |