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The intermediate band approach in the third solar cell generation context
Cita
González Díaz, Germán; Mártil de la Plaza, Ignacio; Prado Millán, Alvaro del; Pastor Pastor, David; Olea Ariza, Javier; García Hemme, Eric; García Hernansanz, Rodrigo y Wahnón Benarroch, Perla (2013). The intermediate band approach in the third solar cell generation context. En: "Spanish Conference on Electron Devices (CDE)", 12/02/2013 - 14/02/2013, Valladolid, Spain. pp. 337-340.
Descripción
| Título: | The intermediate band approach in the third solar cell generation context |
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| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Artículo) |
| Título del Evento: | Spanish Conference on Electron Devices (CDE) |
| Fechas del Evento: | 12/02/2013 - 14/02/2013 |
| Lugar del Evento: | Valladolid, Spain |
| Título del Libro: | Spanish Conference on Electron Devices (CDE) |
| Fecha: | 2013 |
| Materias: | |
| Palabras Clave Informales: | Titanium, vanadium, silicon, ion implantation, pulsed laser melting, intermediate band, solar cells |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014] |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
Más información
| ID de Registro: | 26626 |
|---|---|
| Identificador DC: | http://oa.upm.es/26626/ |
| Identificador OAI: | oai:oa.upm.es:26626 |
| URL Oficial: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6481401 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 25 Jun 2014 16:19 |
| Ultima Modificación: | 22 Sep 2014 11:42 |
