The intermediate band approach in the third solar cell generation context

González Díaz, Germán and Mártil de la Plaza, Ignacio and Prado Millán, Alvaro del and Pastor Pastor, David and Olea Ariza, Javier and García Hemme, Eric and García Hernansanz, Rodrigo and Wahnón Benarroch, Perla (2013). The intermediate band approach in the third solar cell generation context. In: "Spanish Conference on Electron Devices (CDE)", 12/02/2013 - 14/02/2013, Valladolid, Spain. pp. 337-340.

Description

Title: The intermediate band approach in the third solar cell generation context
Author/s:
  • González Díaz, Germán
  • Mártil de la Plaza, Ignacio
  • Prado Millán, Alvaro del
  • Pastor Pastor, David
  • Olea Ariza, Javier
  • García Hemme, Eric
  • García Hernansanz, Rodrigo
  • Wahnón Benarroch, Perla
Item Type: Presentation at Congress or Conference (Article)
Event Title: Spanish Conference on Electron Devices (CDE)
Event Dates: 12/02/2013 - 14/02/2013
Event Location: Valladolid, Spain
Title of Book: Spanish Conference on Electron Devices (CDE)
Date: 2013
Subjects:
Freetext Keywords: Titanium, vanadium, silicon, ion implantation, pulsed laser melting, intermediate band, solar cells
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnologías Especiales Aplicadas a la Aeronáutica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB)

Abstract

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

More information

Item ID: 26626
DC Identifier: http://oa.upm.es/26626/
OAI Identifier: oai:oa.upm.es:26626
Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6481401
Deposited by: Memoria Investigacion
Deposited on: 25 Jun 2014 16:19
Last Modified: 22 Sep 2014 11:42
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM