In situ control of the GE(100)surface domain structure for III-V multijunction solar cells

Brückner, Sebastian; Barrigón Montañés, Enrique; Supplie, Oliver; Dobrich, Anja; Luczak, Johannes; Löbbel, Claas; Rey-Stolle Prado, Ignacio; Kleinschmidt, Peter; Döscher, Henning y Hannappel, Thomas (2013). In situ control of the GE(100)surface domain structure for III-V multijunction solar cells. En: "9th International Conference on Concentrating Photovoltaic Systems", 15/04/2013 - 17/04/2013, Miyazaki, Japan. pp. 1-2.

Descripción

Título: In situ control of the GE(100)surface domain structure for III-V multijunction solar cells
Autor/es:
  • Brückner, Sebastian
  • Barrigón Montañés, Enrique
  • Supplie, Oliver
  • Dobrich, Anja
  • Luczak, Johannes
  • Löbbel, Claas
  • Rey-Stolle Prado, Ignacio
  • Kleinschmidt, Peter
  • Döscher, Henning
  • Hannappel, Thomas
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 9th International Conference on Concentrating Photovoltaic Systems
Fechas del Evento: 15/04/2013 - 17/04/2013
Lugar del Evento: Miyazaki, Japan
Título del Libro: 9th International Conference on Concentrating Photovoltaic Systems
Fecha: 2013
Materias:
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Vicinal Ge(100) is the common substrate for state of the art multi-junction solar cells grown by metal-organic vapor phase epitaxy (MOVPE). While triple junction solar cells based on Ge(100) present efficiencies mayor que 40%, little is known about the microscopic III-V/Ge(100) nucleation and its interface formation. A suitable Ge(100) surface preparation prior to heteroepitaxy is crucial to achieve low defect densities in the III-V epilayers. Formation of single domain surfaces with double layer steps is required to avoid anti-phase domains in the III-V films. The step formation processes in MOVPE environment strongly depends on the major process parameters such as substrate temperature, H2 partial pressure, group V precursors [1], and reactor conditions. Detailed investigation of these processes on the Ge(100) surface by ultrahigh vacuum (UHV) based standard surface science tools are complicated due to the presence of H2 process gas. However, in situ surface characterization by reflection anisotropy spectroscopy (RAS) allowed us to study the MOVPE preparation of Ge(100) surfaces directly in dependence on the relevant process parameters [2, 3, 4]. A contamination free MOVPE to UHV transfer system [5] enabled correlation of the RA spectra to results from UHV-based surface science tools. In this paper, we established the characteristic RA spectra of vicinal Ge(100) surfaces terminated with monohydrides, arsenic and phosphorous. RAS enabled in situ control of oxide removal, H2 interaction and domain formation during MOVPE preparation.

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ID de Registro: 26785
Identificador DC: http://oa.upm.es/26785/
Identificador OAI: oai:oa.upm.es:26785
Depositado por: Memoria Investigacion
Depositado el: 15 Jun 2014 07:49
Ultima Modificación: 22 Sep 2014 11:42
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